Materials reliability in microelectronics V : symposium held April 17-21, 1995, San Francisco, California, U.S.A.
Author(s)
Bibliographic Information
Materials reliability in microelectronics V : symposium held April 17-21, 1995, San Francisco, California, U.S.A.
（Materials Research Society symposium proceedings, v. 391）
Materials Research Society, c1995
Available at 9 libraries
Note
Includes index
Description and Table of Contents
Description
This long-standing proceedings series is highly regarded as a premier forum for the discussion of microelectronics reliability issues. In this fifth book, emphasis is on the fundamental understanding of failure phenomena in thin-film materials. Special attention is given to electromigration and mechanical stress effects. The reliability of thin dielectrics and hot carrier degradation of transistors are also featured. Topics include: modeling and simulation of failure mechanisms; reliability issues for submicron IC technologies and packaging; stresses in thin films/lines; gate oxides; barrier layers; electromigration mechanisms; reliability issues for Cu metallizations; electromigration and microstructure; electromigration and stress voiding in circuit interconnects; and resistance measurements of electromigration damage.
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