Materials reliability in microelectronics V : symposium held April 17-21, 1995, San Francisco, California, U.S.A.
Author(s)
Bibliographic Information
Materials reliability in microelectronics V : symposium held April 17-21, 1995, San Francisco, California, U.S.A.
(Materials Research Society symposium proceedings, v. 391)
Materials Research Society, c1995
Available at / 9 libraries
-
No Libraries matched.
- Remove all filters.
Note
Includes index
Description and Table of Contents
Description
This long-standing proceedings series is highly regarded as a premier forum for the discussion of microelectronics reliability issues. In this fifth book, emphasis is on the fundamental understanding of failure phenomena in thin-film materials. Special attention is given to electromigration and mechanical stress effects. The reliability of thin dielectrics and hot carrier degradation of transistors are also featured. Topics include: modeling and simulation of failure mechanisms; reliability issues for submicron IC technologies and packaging; stresses in thin films/lines; gate oxides; barrier layers; electromigration mechanisms; reliability issues for Cu metallizations; electromigration and microstructure; electromigration and stress voiding in circuit interconnects; and resistance measurements of electromigration damage.
by "Nielsen BookData"