Hot-carrier effects in MOS devices

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書誌事項

Hot-carrier effects in MOS devices

by Eiji Takeda, Cary Y. Yang, Akemi Miura-Hamada

Academic Press, c1995

大学図書館所蔵 件 / 全8件

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注記

Includes references(p187-301) and index

内容説明・目次

内容説明

The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers.

目次

MOS Device Fundamentals Hot-Carrier Injection Mechanisms Hot-Carrier Device Degradation AC and Process-Induced Hot-Carrier Effects Hot-Carrier Effects at Low Temperature and Low Voltage Dependence of Hot-Carrier Phenomena on Device Structure As-P Double Diffused Drain (DDD) Versus Lightly Doped Drain (LDD) Devices Gate-to-Drain Overlatpped Devices (GOLD)

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