Semiconductor heteroepitaxy : growth, characterization and device applications, Montpellier, France 4-7 July 1995
Author(s)
Bibliographic Information
Semiconductor heteroepitaxy : growth, characterization and device applications, Montpellier, France 4-7 July 1995
World Scientific, c1995
Available at / 10 libraries
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The Institute for Solid State Physics Library. The University of Tokyo.図書室
428.41:S337210102971
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Description and Table of Contents
Description
Examining growth characterization and device applications of semiconductor heteroepitaxy, this text includes such topics as: MBE of ZnSc alloys for room temperature CW laser diodes, and pseudomorphic blue-green quaternary injection lasers.
Table of Contents
- MBE of ZnSc alloys for room temperature CW laser diodes, R.L. Gunshor at al
- Pseudomorphic blue-green quaternary injection lasers, D.J. Olego
- metal-organic precursors for semiconductor growth, requirements and future development, L.M. Smith et al
- optimization of ZnSe and SuCdSc alloys MOVPE growth for blue-green microgun laser application, T. Cloitre et al
- MBE growth of wide bandgap II-VI lattice-matched alloys and heterostructures on InP, M.C. Tamargo et al
- CdCaTc and CdMgTc heterostructures grown by molecular beam expitaxy, A. Waag et al. (Part contents).
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