Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995

Author(s)

• International Conference on Defects in Semiconductors
• Suezawa, Masashi
• Katayama-Yoshida, Hiroshi

Bibliographic Information

Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995

edited by Masashi Suezawa and Hiroshi Katayama-Yoshida

（Materials science forum, v. 196-201）

Trans Tech Publications, c1995

• : set
• pt. 1
• pt. 2
• pt. 3
• pt. 4

Other Title

Defects in semiconductors 18

Description and Table of Contents

Description

The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.

Table of Contents

Unified Theory of Defects in Insulators Optical and Magnetic Resonance Studies of Defects in GaN The Effective Mass Donor in Galliumnitride Free Electrons and Resonant Donor State in Gallium Nitride Electrically and Optically Detected Magnetic Resonance Studies of GaN-Based Heterostructures Carrier Localization in Gallium Nitride Time-Resolved ODMR Measurements on the 'Yellow Luminescence' in MOCVD-Grown GaN Films Luminescence of Doped and Undoped Bulk Crystals of GaN Photoluminescent Properties of Undoped GaN Prepared by Atmospheric Vapor Phase Epitaxy Charactrization of Residual Transition Metal Ions in GaN and AIN Sn Moessbauer Study of Ion Implanted GaN Ni Complexes in Diamond Nickel and Nitrogen(?) Related Defects in High Pressure Synthetic Diamond Ni Related Centers in Synthetic Diamond Defect Control and Defect Engineering in Ion-Implanted Diamond Ga Bound Excitons in 6H-SiC Photoluminescence and Electron-Spin-Resonance Studies of Defects in Ion-Implanted Thermal SiO2 Films Theory of Interstitial Oxygen in Silicon and Germanium Impurity Behavior during Si Single Crystal Growth from the Melt Lattice Sites of Li in Si and Ge Oscillator Strengths and Linewidths of Shallow Impurity Spectra in Si and Ge Electric Field Broadening of Gallium Acceptor States in Compensated Ge: Ga, As Carbon Induced Inhomogeneous Strain Splitting of the Phosphorus Bound Exciton Line in Silicon Isoelectronic Bound-Multiexciton Systems in Thermally-Treated Czochralski Silicon Excitons Bound to Isoelectronic C3V-Defects B480 (1.1068 eV) in Silicon Defect Production and Annealing in Degenerate Silicon Irradiated with fast Electrons at Low Temperatures Optical Studies of Infrared Active Defects in Irradiated Si After Annealing at 450 DegreesC Impurity Centers Associated with Magnesium Introduced in Silicon by Fast Neutron Transmutation Reactions EPR and IR Absorption of Defects in Isotopically Enriched Germanium NMR Study of Impurity Electronic Structure and Dynamics Native Point Defect Equilibria and the Phase Extent of Gallium Arsenide The Role of Point Defects in Non-Stoichiometric III-V Compounds Intrinsic Acceptors in Semi-Insulating Galliumarsenide Studied by Positron Annihilation and ODMR Bound Exciton Spectra in Semi-Insulating GaAs Oscillations in PLE Spectra of Li Passivated GaAs, Related to Interstitial Li Donors Magneto-Optical and Odendor Investigations of the Substitutional Oxygen Defect in Galliumarsenide Identification of Phonon Scattering Resonances with Defects in Gallium Arsenide Photoluminescence of Germanium Doped Gallium Arsenide Effect of Donor Nature on Behavior of Photoluminescence of the Gallium Vacancy - Shallow Donor Complexes in n-Type GaAs under Uniaxial Pressure Structure of the 0.95 eV Photoluminescence Centers in n-Type GaAs Effects of Activation Annealing on Thermally Stimulated Current in Semi-Insulating LEC GaAs Substrates Arsenic-Antisite-Related Defects in GaAs Grown at Low Temperature: Charaterization of Localized States Generation of EL2- Level Upon Rapid Thermal Annealing in Low-Temperature GaAs Layers Grown by MBE Thermal and Optical Emission Processes of Electrons and Holes from EL2 in N- and P-Type GaAs Studies of Deep Levels in n-GaAs by SADLTS Trends in the Metastability of DX-Centers Carrier Concentrations Saturation in n Type AlxGa1-xAs Doping Puzzles in II-VI and III-V Semiconductors Theoretical Study on Hole Compensation Mechanism: - Stability of Two Nitrogen Atoms at SE Substitutional Site of ZNSE - Acceptor Compensation in Nitrogen Doped Zinc Selenide Nitrogen-Doping Efficiency in ZnSe and ZnTe Doping of ZnSe, ZnTe, and CdTe with Group V Elements Lattice Sites of Ion Implanted Li in Zn-Rich ZnSe Intrinsic Defects in ZnSe, ZnTe, and CdS Doped with Li The Electronic Structure of Deep Donors and the Nature of the Anion Vacancy in II-VI Compound Semiconductors Studies of Defects in Electron and Proton Irradiated ZnO by Positron Annihilation Photoluminescence of Bulk Si-Ge Single Crystals Dopant Diffusion in Strained and Relaxed Si1-xGex In Situ Phosphorus Doping of Si and Si1-xGex Epitaxial Layers by RTP/VLP-CVD Electrical Transport in SixGe1-x Bulk Alloys Electron Paramagnetic Resonance of Phosphorus, Platinum, and Iron in Float Zone Si1-x Gex Crystals Relaxation-Induced Deep Levels in SiGe/Si Heteroepitaxial Films Irradiation Induced Lattice Defects in Si1-xGex Epitaxial Devices Photoluminescence of Deformed Si-Ge Alloy Influence of Cu Contamination and Hydrogenation on Recombination Activity of Misfit Dislocations in SiGe/Si Epilayers An Electron Paramagnetic Resonance Study of Defects in Semiconducting Iron Disilicide DX Centres Versus Shallow D-Centres in AIGaAs Based Quantum Wells Extrinsic Self-Trapping of an Electron in Quantum-Well Structures Carbon Delta-Doping In GaAs and AlAs Theory of Si -Doped GaAs Metastability and Electronic Structure of Periodically n-Type and p-Type -Doped Layer in GaAs Infrared and Raman Studies of Si Delta-Doped (100) GaAs Grown by MBE at 400 DegreesC on c(4x4) Surfaces Saturation of Luminescence Quenching Due to Nonradiative Centers in a GaAs/AlGaAs Quantum Well Defect Induced Electron Transport Trough Semiconductor Barriers Correlated Charged Donors in GaAs/AlGaAs Quantum Well. Quantum- and Mobility-Scattering Times Non-Radiative Recombination in Irradiated GaAs/AlGaAs Multiple Quantum Wells Defect Related Recombination Processes in II-VI Quantum Wells Magnetoelectronic States in Semiconductor / Antiferromagnet Superlattices Shallow and Deep Centers in Heavily Doped Silicon Quantum Wells Important Nonradiative Grown-In Defects in MBE-Grown Si and SiGe/Si Heterostructures Defect Formation and Recombination Processes in p-Type Modulation-Doped Si Epilayers Profiling the Deep Levels inSiGe/Si Microstructure by Small-Pulse Deep Level Transient Spectroscopy Multiphonon Carrier Emission and Capture by Defects in Nanostructures Adsorption of Antimony on Si(113) Surfaces: Ab-Initio Calculations and STM Investigations Enhanced Impurity Solubility and Diffusion Near Surfaces A Correlation between Compositional Fluctuations and Surface Undulations in Strained Layer Epitaxy Si/Ge Ordered Interface: Structure and Formation Mechanism Spin Dependent Recombination and EPR of Surface Paramagnetic Centers in Crystalline and Porous Silicon Variation of 2DEG-Properties on Hetrointerface Caused by the Surface Defects Recharging Stucture of the Pb Center: Endor Investigation High Quality GaAs on Si Grown by CBE Control of Defects in GaAs/GaInP Interface Grown by MOVPE Ab Initio Study of Cl Impurity at GaAs Surfaces Influence of Dislocations on the Transport Properties of Two Dimensional Electron Gas in the Quantum Regim High-Performance Al(Ga)As/GaAs Resonant Tunneling Diodes Achieved by the Control of Structural Defects at the Interface Strain Characterization of Hg1-xFexSe-Layers by Electron Spin Resonance Photoreflectance, Reflectivity and Photoluminescence of MOVPE Grown ZnSe/GaAs Epilayers and ZnSeS/ZnSe Superlattices Photoinduced Defects in CdS-Doped Glasses Electronic Structure of Erbium Centers in Silicon Erbium in Silicon: A Defect System for Optoelectronic Intergrated Ciricuits Excitation of Rare Earths in Semiconductors by the Excitonic Auger Recombination Optical and Electrical Properties of Si:Er Light-Emitting Structures Light Emission from Er-Implanted Silicon Using Anodization Erbium Related Centers in CZ-Silicon Electrically Active Centers in Silicon Doped with Erbium Erbium Doping to P-Based III-V Semiconductors by OMVPE with TBP as a Non-Toxic P Source Total Energy Calculation for Er Impurity in GaAs Estimation of Rare-Earth Energy Levels in the Bandgap of Semiconductors Characteristics of Er-Oxygen Complex Centers in GaAs Pressure-Induced Increase of the Intra-4f Luminescence of GaAs:Er,O at Room Temperature Relaxation of Yb 4f-Shell in In(P,As) Alloys The Importance of Auger Effect on the Efficiency of Er-Related Luminescence in InP:Er Investigation of Er-Related Centers in Doped GaP High Resolution DLTS Studies of Transition-Metal-Related Defects in Silicon Ab-Initio Total Energy Calculations and the Hyperfine Interaction of Interstitial Iron in Silicon Substitutional Transition Metal Defects in Silicon Grown-In by the Float Zone Technique Interaction of Iron Donor with Transition-Metal Impurities in Silicon Lithium-Gold-Related Photoluminescence in n-Type Silicon Copper Species in Ultra-Pure Germanium Crystals Zeeman Spectroscopy and Crystal-Field Model of Neutral Vandium in 6H-Silicon Carbide Electronic Properties of GaAs Doped with Copper Zeeman Spectroscopy of Transition Metals in Hexagonal GaN Paramagnetic Resonance of the Neutral Maganese Acceptor in GaP Piezo-Spectroscopic Study of the V3+ Photoluminescence in GaP:V:S Electron Paramagnetic Resonance of the Mn-Impurity in ZnS Nanocrystals Zeeman Splitting and Isotope Shift of Optical Transitions at Ni2+ Centers in Cubic ZnS Energy States of Ni and Band Offsets in Zn1-xCdxSe(Ni) and ZnSxSe1-x(Ni) Alloys Intermdiately Bound Excitons in Wurtzit Type Semiconducturs Doped with Transition Metal Impurities Iron and Nickel as Centers of Nonradiative Recombination in ZnS and ZnSe Nonlinear Zeeman Behaviour of Copper Centers in ZnS and CdS Electron Paramagnetic Resonance and Optical Studies of Vanadium-Doped ZnTe The Titanium and Vanadium Donor in CdTe Peculiarities of Interstitial Carbon and Di-Carbon Defects in Si The NNO Defect in Silicon Generation of Deep Level by Nitrogen Diffusion in Si A First-Priciples Study of Carbon Impurities in GaAs and InAs Novel Properties of Hydrogen-Containing Complexes Revealed by their Hydrogen Vibrations Hydrogen Incorporation and Interaction with Impurities and Defects in Silicon Investigated by Photoluminescence Spectroscopy A Hydrogen-Related Defect in Polycrystalline CVD Diamond Dynamics of Hydrogen in Si and GaAs: Results from Muonium Experiments Acceptor and Donor Neutralization by Hydrogen in Bulk 6H-SiC Hydrogen States and Passivation in Silicon Endor Identification of a Hydrogen-Passivated Thermal Donor Hydrogen Passivation of the Sulfur Double Donor in Silicon Investigated by EPR and ENDOR Hydrogen Passivation of Iron-Related Hole Traps in Silicon Boron Neutralization in Epitaxial Si Films Grown by Photo-CVD at Very Low Temperature ( 200 DegreesC) Screening Effect of Binding of P-Si-H Complex in Silicon The H2* Defect in Crystalline Germanium A Theoretical Study of the B-H and Al-H Complexes in Si Calculations of the Neutral and Charged States of the {H,C} Pair in Silicon Structural and Electronic Properties of Carbon-Hydrogen Complex in Silicon Stability and Defect Reaction of Two Hydrogen-Carbon Complexes in Silicon Carbon-Hydrogen Deep Level Luminescence Centre in Silicon Responsible for the T-Line Optical Absorption due to Vibration of Hydrogen-Oxygen Pairs in Silicon Theory of the NiH2 Complex in Si and the CuH2 Complex in GaAs Hydrogen Induced Defects in Cobalt Doped Silicon H Interacting with Intrinsic Defects in Si Formation of Hydrogen-Oxygen-Vacancy Complexes in Silicon Metastability and Negative-U Properties for Hydrogen-Related Radiation-Induced Defect in Silicon Interstitial Hydrogen and the Dissociation of C-H Defects in GaAs Hydrogen Induced Degradation in Heavily Carbon-Doped GaAs Diodes Acceptor-Hydrogen Complexes in InAs Vacancy- and Acceptor- H Complxes in Inp Investigation of the Manganese-Hydrogen Complex in Inp First-Principles Calculation on Hydrogen Passivation Mechanism in Mg Doped GaN Acceptor-Hydrogen Interaction in Ternary III-V Semiconductors Upconversion Induced by Deep Defects in GaAs Negative Effective-U and positive Effective-U Nature of the Bistable Dangling-Bonds in a-Si, a-Si:H and c-Si Studied by ab Initio Molecular-Dynamics Simulation New Bistable Oxygen-Related Complex in Silicon Theoretical Modelling of Donor Metastable States in n-Type Gallium Arsenide Donor Metastable States and the Polaron Effect in n-Type Gallium Arsenide A New Type of Metastability due to Donors in GaAs Nonradiative Investigations of Photoquenching and Recovery of EL2 Defect Levels in Si-GaAs The Role of a 70-80 me V Acceptor in the Photoquenching of EL' Holes Induced by Strong Near Band Gap Light in GaAs:O. EL2 Related? Metastable Photogenerated Effects in Low Resistivity GaAs Introduction of Metastable Vacancy Defects in Electron Irradiated Semi-Insulating GaAs Arsenic Antisite-Arsenic Vacancy Complex and Gallium Vacancy in GaAs: A Kind of Bistability Pair of Intrinsic Defects? Electronic Properties and Introduction Kinetics of a Metastable Radiation Induced Defect in n-GaAs Local Structure of the DX Center in AlGaAs: Results from Positron Spectroscopy Direct Experimental Evidence of Autolocalization Nature of DX-Centers Magneto-Optical and EPR Investigation of Ionized DX Centers in Te-Doped AlxGa1-xAs Silicon-Related Local Vibrational Mode Absorption in Bulk AlGaAs A Bistable Defect in Si-Doped Al0.3Ga0.7As Use of Bistable Centers in CdF2 in Holographic Recording Structural Study of Degraded II-VI Blue-Light Emitters Evidence for High Vacancy Concentrations in Heavily Doped N-Type Silicon from Mossbauer Experiments Analysis of the Recombination-Active Region Around Extended Defects in Silicon Photoluminescence of Ring-Distribution of Oxygen Precipitates in Czochralski Silicon Positron Lifetime in Si Multivacancies Frenkel Defects in Low Temperature e-- Irradiated Ge and Si Investigated by X-Ray Diffraction On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350 DegreesC. Defects in NTD MCZ Si Doped with Magnesium Irradiation Temperature Dependence of Residual Defects in 17MeV-Proton Bombarded Silicon Study of Defect Behavior in Ion-Implanted Si Wafers by Slow Positron Annihilation Spectroscopy Extended Defect Formation in Silicon and Germanium Induced by Light Gas Ion Irradiation Studied with Transmission Electron Microscopy A Positron Lifetime Study of Defects in Plastically Deformed Silicon Increase of Electrical Activity of Dislocations in Si during Plastic Deformation Electronic States Associated with Straight Dislocations in P-Type SiliconStudied by Means of Electric-Dipole Spin Resonance Energy States of Deformation-Induced Dislocations in Silicon Crystals Cathodoluminescence Study on Dislocation-Related Luminescence in Silicon Precipitation of Cu, Ni and Fe on Frank-Type Partial Dislocations in Czochralski-Grown Silicon Effect of Transition Metal Impurities on the Photoluminescence of Deformed Si Crystal New Effect of Interaction between Moving Dislocation and Point Defects in Silicon Computer Simulation Study on Dislocation Motion in Semiconductors Scratch-Related Effects on Silicon Surface Study of Electron Irradiation-Induced Defects of 3c-SiC and Diamond by Ultra-High Voltage Electron Microscopy Study on the Irradiation Induced Defects in 6H-SiC Vacancy Type Defects inGaAs After Electron Irradiation Studied by Positron Lifetime Spectroscopy Ga-Vacancies and AsGa-Antisites in Electron Irradiated GaAs Frenkel Pairs and PIn Antisites in Low Temperature Electron Irradiated InP Generation of Point Defects during Plastic Deformation of InP Category II and Category III Defects in 200 KEV Fe Implanted InP Clustering Process of Point Defects in GaP Studied by Transmission Electron Microscopy Hg Vacancies in Hg1-xCdxTe Studied by Positron Annihilation ESR Study of a-Ge1-xNx Prepared by Magnetron Sputtering First Principles Investigation of Vacancy Oxygen Defects in Si Oxygen Complexing with Group II Impurities in Silicon Models of Oxygen Loss and Thermal Donor Formation in Silicon by the Clustering of Rapidly Diffusing Oxygen Dimers Effect of Carbon on Thermal Double Donor Formation in Silicon Anomalous Fast Annihilation of Thermal Donors in Carbon-Rich Silicon Ab-Initio Total Energy Calculation and the Hyperfine Interactions of Iron-Acceptor Pairs in Silicon The Structure and Bonding of Iron-Acceptor Pairs in Silicon Ab Initio Study on Fe-Acceptor Pairing in Silicon Photo-Induced Iron Atom Motion of Iron-Acceptor Pairs in Silicon Recombination-Enhanced Migration of Interstitial Iron in Silicon The Origin of the Low-Spin Ground State for Trigonal Fei-AuSi and Fei-AgSi Pairs in Silicon The Atomic Stucture of Mn4 Clusters in Silicon Perturbed Angular Correlation Study of Impurities Interaction in Si TDS and RB Studies of Ar Implanted to Si Reactions between Point Defects in Silicon Doped with Germanium Influence of Intrinsic Elastic Stresses on the Interaction between Point Defects in Si Surface Recombination in Semiconductors Reactivation Kinetics of Lithium-Passivated Acceptors inGaAs Reactivation of Si Donors and Zn Acceptors in Plasma-Irradiated GaAs by Reverse Bias Annealing Mechanism of Deep Penetration of Plasma-Induced Defects inGaAs: Minority Carrier Injection Effect Impurity-Defect Complexes in Neutron Transmutation Doped Gallium Arsenide and Germanium Crystals PAC-Investigations of the Donor-Defect Interaction in III-V Compound Semiconductors with the Probe 77Br(77Se) Scanning Tunneling Spectroscopic Studies of GaAs Doped with Si Thermal Precipitation of Excess Arsenic on Dislocations in LEC Grwon GaAs Crystal Optically Induced Anneal of GaAs and AlGaAs Layers Electron-Irradiaton Induced Defects in Fe-Doped Semi-Insulating InP Deformation-Induced Defects in GaSb Damages in AlGaAs/GaAs Heterostructures Induced by KeV-Electron-Beam Irradiation TEM Investigation of Point Defect Interactions in II-VI Compounds Athermal Motion of Donors under Ultrasound in CdS Crystals Chemical Identification on the Atomic Scale in MBE-Grown III-V Alloy Semiconductors Positron-Annihilation 2D-Acar Study of Divacancy and Vacancy-Oxygen Pairs in Si Defect Studies with Isotopically Designed Semiconductors The Chemical Identification of Defect Impurities Using Radioactive Isotopes Radioactive Isotopes in Photoluminescence Experiemts: Identification of Defects Levels Electrical Detection of Electron Paramagnetic Resonance: Studies of the Mechanism of the Spin-Dependent Recombination Process The Bending of Si Crystals as a Means to Determine the Orientation of Defects in Si Novel Very Slow Photoluminescence Processes at Transition Metal Ions in III-V Semiconductors Frenkel Pairs in INSB Induced by Neutrino Recoil and Observed by Moessbauer Spectroscopy High Sensitivity Detection of Silicon Surface Reactions by Photoconductance Decay New Experimental Methods of Detection the Paramagnetic Recombination Centers in Silicon P-N Junctions and Diodes Poole-Frenkel Ionization of Ge:Hg in Terahertz Electromagnetic Fields Raman Image Study of Defects in Ion-Implanted and Post-Annealed Silicon Determination of High Relative Deep Level Concentrations in DLTS Generation of Ultra-High Acceleration Field for New Extreme Condition Science Phonon Spectroscopy of Low-Energy Excitations of Defects in Semiconductors Local Vibrational Modes of 3d Elements in Wurtzite Type ZnO and GaN Crystals Anharmonicity of The CAsLocal Oscillator in Gallium Arsenide Calculation of Local Vibrational Modes at Point Defects in Semiconductors The Migration of Carbon and Self Interstitials in Silicon Anomalous Diffusion of Phosphorus in Silicon by Pair Diffusion Model and Decrease in Quasi Vacancy Formation Energy Electric-Dipole Spin Resonance of Defects Correlated with the Diffusion of ZN Into SI Enhanced Diffusion of Impurities into Solids by Electron Beam Doping Interstitials in Silicon Produced by Electron Beam Doping (Superdiffusion) Electron Energy Dependennce of Impurity Concentrations in Semiconductors by Electron Beam Doping (Superdiffusion) Surface Diffusion of Atoms by Electron Beam Doping (Superdiffusion) Dopant Diffusion and Stacking Fault in Silicon during Thermal Oxidation Influence of Simultaneously Implanted As+ Ions on Diffusivity and Activation Efficiency of B Atoms Implanted into Silicon Effects of Background Doping Level on ZN Diffusion in GaAs/AlGaAs Multiple-Quantum-Well Structures Study of The Compensating Centres in GaAs:Te by Positron Annihilation Time-of-Flight in Lithium-Compensated GaAS The Influence of the Zinc Concentration on Defect Characteristics of InP Influence of Intrinsic Defects on the Electronic Structure of Non-Stoichiometric CuInS2 Chalcopyrite Semiconductors Defects in Porous Silicon: A Study with Optical and Spin Resonance Methodes Oxygen Related Defect Centers: the Source of Room Temperature Red Photoluminescence in As-Made and Oxidized Porous Silicon Review of the Influence of Micro Crystal Defects in Silicon Single Crystals on Gate Oxide Integrity Fundamentals of Point Defect Aggregation and Dissolution Phenomena of Crystal Originated Defects in Czochralski Silicon Nature of D-Defect in CZ Silicon: D-Defect Dissolution and D-Defect Related T.D.D.B Relationship between Grown-In Defects and Thermal History during CZ Si Crystal Growth Growth Parameters Determining the Type of Grown-In Defects in Czockralski Silicon Crystals Effect of Magnetic Field and Heat Treatment on the Grown-in Defects in MCZ Si Single Crystals Annealing Behavior of a Ligth ScatteringTomography Detected Defect near the Surface of Si Wafers Influence of Point Defect Concentration in Growing CZ-SI on the Formation Temperature of the Defects Affecting Gate Oxide Integrity Genration of Oxidation Induced Stacking Faults in CZ Silicon Wafers Relation between Minute Lattice Strain and Anomalous Oxygen Precipitation in a Czochralski-Grown Silicon Crystal Photoluminescence Due To Oxygen Precipitates Distinguished from the D Lines in Annealed Si Lattice Defects in High Quality As-Grown CZ Silicon, Studied with Ligth Scattering and Preferential Etching Techniques Microdefects in Nitrogen Doped FZ Silicon Revealed by Li+ Drifting Influence of Al Doping on Deep Levels in MBE GaAs Deep Donor - Acceptor Correlations in Low Temperature GaAs Dislocation Reduction of GaAs and AIGaAs on Si Substrate for High Efficiency Solar Cell Spatial Distribution of Microdefects around Dislocations in Si-Doped GaAs Study of the Dislocation Atmospheres in N-Type GaAs by DSL Photoetching, EBIC and Microraman Measurements Study of Gallium and Antimony Cluster Formation in GaSb Bulk Crystals Grown from Nonstoichiometric Melts TEM Evaluation of Ordered and Modulated Structures in MBE-Grown InAlAs Crystals on (110)InP SF6/02 and CF4/02 Reactive-Ion-Etching-Induced Defects in Silicon Studied by Photoluminescence Spectroscopy: Role of Oxygen Measurements of Polishing-Induced Residual Damages in Silicon Wafers Using Noncontact Photoconductivity Amplitude Technique Lifetime Identification of Thermal Oxidation Process Induced Contamination in Silicon Wafers Transmission Electron Microscopy of LatticeDefects in CZ-Silicon Wafer Formed by Two-Stage Annealing Rhombic Aggregation of Dislocations in CZ-Si Crystal Study of Near-Surface Microdefects in Czochralski-Si Wafers After a CMOS Thermal Process Subsurface Damage in Single Diamond Tool Machined SI Wafers Interface Defects of Bonded Silicon Wafers Direct Bonding of Silicon Wafers with Grooved Surfaces: Characterization of Defects and Application to High Power Devices Oxygen Precipitation in CZ Silicon Crystals Contaminated with Iron Evaluation Method of Precipitated Oxygen Concentration in Low Resistivity Silicon Wafers Using X-Ray Diffration Precipitates in Antimony Implanted Silicon Secondary Defects and Deep Levels in N-Si Induced by High Energy P Ion Implantation High Energy Si, Zn and Ga Ion Implantation into GaAs on Si Local Structure Analysis around Arsenic Implanted into Silicon by XAFS Technique Effects of Si3N4 Films on Diffusion of Boron and Extended Defects in Silicon during Post-Implantation Annealing Photoluminescence Defect Diagnostics in Poly-Si Thin Films DLTS of Polysilicon Emitter Solar Cells Photoluminescence Study on Point Defects in SIMOX Buried SiO2 Film Spin-Dependent Transport in SiC and III-V Semiconductor Devices Room Temperature Defect Etching of III-V Compounds and Alloys Grown on Si Substate Using Hydrogen Fluoride and Nitric Acid ODMR Investigation of Near-Surface Damage Induced by Dry-Etching Process Using GaAs/AlAs Quantum Well Structures Novel Technique for Reliable AlGaAs/GaAs Light Emitting Diodes on Si Using GaAs Islands Active Regions Thermal and Athermal Migration of Ion-Irradiation Defects in Al0.3Ga0.7As/GaAs Heterostructures Characterization of Mg+F, Mg+Ar Dual Ion Implanted AlxGa1-xAs(0 x 0.75) Layers Atomic-Scale Studies of Point Defects in Compound Semiconductors by Scannig Tunneling Microscopy Electrical and Defect Characterization of Sputter Deposited Au and Cr Schottky Barrier Diodes on GaAs Optical and Electrical Characterisation of He Plasma Sputtered n-GaAs Contamination and Cleaning of GaAs-(100) Surfaces Characterization of Electron Traps in n-InP Induced by Hydrogen Plasma Gettering of Transition Metals in Multicrystalline Silicon Substitutional Gettering of Platinum by Diffusion into Ion-Beam Damaged Silicon Gettering of Iron Using Electrically Inactive Boron Doped Layer Ab Initio Calculation for G-Values of ESR Centers in a-Si:H

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• NCID: BA27177886
• ISBN:
  • 0878497161
  • 0878497129
  • 0878497137
  • 0878497145
  • 0878497153
• Country Code: sz
• Title Language Code: eng
• Text Language Code: eng
• Place of Publication: Zürich, Switzerland
• Pages/Volumes: 4 v. (xliii, 2027 p.)
• Size: 25 cm
• Classification:
  • NDC8 : 428.8
• Parent Bibliography ID:
  • BA00294222