Defects in semiconductors I, NCDS-1 : proceedings of the 1st National Conference on Defects in Semiconductors, held in St. Petersburg, Russia, April 26-30, 1992

著者

• Bagraev, Nickolay T.
• National Conference on Defects in Semiconductors

書誌事項

Defects in semiconductors I, NCDS-1 : proceedings of the 1st National Conference on Defects in Semiconductors, held in St. Petersburg, Russia, April 26-30, 1992

editor, Nickolay T. Bagraev

, c1993

タイトル別名

NCDS-1

注記

Includes bibliographical references and indexes

内容説明・目次

内容説明

This volume focuses on current theoretical and experimental investigations of defects in III-V and II-VI compounds, silicon, germanium, Si-Ge alloys, and amorphous semiconductors. The discussions also address the metastability and superconductivity induced by point defects, dislocations and processing in semiconductors. An important feature of this book are the special papers on defects in SiC and IV-VI compounds, and the contributions on hot topics such as nonequilibrium diffusion, negative-U defects and several new techniques.

目次

Anisotropic Acceptors Induced In GaAs by Group I Elements Cu, Ag, Au: Properties and Trends 3D-4D-5D Transition and 4f Rare Earth Elements in III-V and II-VI Semiconductors as Luminescent Centres and Probes in Diagnostics of Implanted Layers Symmetry of VGaTeAs Complex in GaAs and its Reorientation at Low Temperature Electrodipole Spin Transitions of the Neutral Manganese Acceptor Mn DegreesGa in Gallium Arsenide On the Ground State of Mn Ga Defects in a GaAs: Mn System Defect-Impurity Interaction in Irradiated n-GaAs Long-Range Effect of Ion Irradiation on the System of Defects in Indium Phosphide Phonon-Impurity Photoconductivity Due to Ge Acceptor in GaAs1-xSbx Alloys The El2 Center in GaAs: Symmetry and Metastability Metastable Electronic States Caused by Native Defects and III-d Group Impurities in A4B6 Semiconductors Electric Field Induced Electron Emission from Deep Level Center in GaAs Generation of the El2 Defect in n-GaAs Irradiated by High Energy Protons Synergetic Photoelectric Phenomena Induced by Associations of Rare-Earth Metal Impurities with Lattice Defects in Si and Semiconductors of Type A3B5 and A2B6 Peculiarities of Display of Multistable Defects in Relaxation Spectroscopy Spectroscopy of II-VI Compounds Doped with Transition-Metal Ions Photoionization of the Impurity Ion in ZnS:Fe: Influence of Lattice Relaxation Vibronic Interaction and Luminescence of ZnSe:Cr Quenching Centers of Red Luminescence in ZnSe:Te Dynamics of Electron-Phonon Interaction in ZnSe:Cr Crystals under Photoexcitation in Charge Transfer Band Nonlinear Spectroscopy of DA-Centers of Green-Edge-Luminescence in CdS Crystals. Stepwise Exciton Localization by Isoelectronic Defects Superfine Splitting in CdS Doped by Fe Peculiarities of Spin-Splitting in the Exciton Spectra of Cd1-xMnxS Crystals in a Magnetic Field Exitonic Spectra of Cd1-xFexTe Crystals Energy States of Ni in Zn1-xMnxSe:Ni Solid Solutions Non-Equilibrium Diffusion in Silicon Non-Equilibrium Phenomena during Impurity Diffusion in Heavily Doped Silicon Diffusion of Gold in Single Crystal Silicon with Growth Microdefects Enhanced Gold Diffusion in Silicon under Intrinsic Point Defect Flow Impurity Diffusion in Silicon under Strong Interaction with the Point Defect Clusters Mechanisms of Impurity Diffusion into Pb1-xSnxTe Solid Solution The Effect of Abnormal Ion Electromigration in a Disorder Media H States and Passivation of Defects and Impurities in Silicon Electron Stimulated Defect Reactions in Silicon under Pulsed Photon Treatment Piezocapacitance Spectroscopy of Deep Level Centers in Silicon Deep Levels of Thermal Defects in High Resistivity Silicon Capacitance Transient Spectroscopy of Process-Induced Defects with Deep Levels in P-Type Silicon Radiation Defect Formation in Silicon Doped with Impurities of the Group IV Transition Metals Influence Intrinsic Elastic Stresses on the Annealing Processes of Radiation Defects in Silicon Thermal Broadening of the Absorption Lines of Group III and V Elements in Single-Crystal Silicon Interstitial Oxygen in Nature and Monoisotopic Germanium Defect Production in Si:Ge Irradiated by Gamma-Rays at 4.2K, 78K and 300K The Substitutional Reaction in Alloys Si1-xGex The Defects in Germanium-Silicon Alloys The Influence of Current Carriers on Shallow Impurity Limited Solubility in Semiconductors New Shape of Inhomogeneously Broadened Resonance Lines in Semi-Infinite Media: Luminescence of Sm2+ Ions in Thin Epitaxial CaF2 Films on Si (111) Hopping Conductivity of Ion-Implanted by Sulphur Silicon Method and Model for Treating Negative-U Centers in Silicon: Si:Vo and Si:(VH3)- Zn-Related Center in Silicon: Negative-U Properties Resonance (Quasilocal) States in AIVBVI Semiconductors Superconductivity in IV-VI Semiconductors Induced by Impurity Resonance States The Self-Comensation of Electrical Active Impurity by Intrinsic Defects in Solid Solutions Pb0.8Sn0.2Te and PB0.93Sn0.07Se Tunnel Spectroscopy of Resonance and Metastable Impurity States in Lead Telluride PbTe(Ga) Photoconductivity Spectra in the Far Infrared Low-Temperature Switching in PbTe at High Electric Fields Localization in Ultrahigh Magnetic Fields in the Pb1-xSnxTe (In) Alloys Microwave Resonance of the Persistant Photoconductivity in Pb1-xSnxTe(In) Alloys Electrical and Photoelectrical Properties of PbSnTe/PbTeS Lattice Matched Heterostructure Diodes Dislocations in Semiconductors as One Dimensional Electronic Systems Dislocation Superlattices Based on Lead Chalcogenides as HTSC Models Metastable Behavior of Dislocation Charge in Space Charge Region Possibility of Reconstruction of Concentration Profile of Point Defects in Crystals by the Method of X-Ray Interference Diffractometry Anomalously Wide Impurity Atomosphere near the Dislocation Slip Plane in Si Oxygen-Related Thermal Donors in Heat-Treated Cz-Si Formation and Properties of Thermal Donors Generated by Prolonged Annealing in Si Crystals with Different Oxygen and Carbon Contents Metastability of Thermal Donors in Silicon: Photo-EPR Study Peculiarities of Thermal Donors Generation and Oxygen Precipitation at 650 DegreesC with Silicon Irradiated by Neutrons Thermal Donor Formation Affected by Strain Fields Induced by Imperfections of Silicon Crystal Lattice Analytical Approach to the Theory of Transition-Metal Impurities in Semiconductors Cluster Approach for Investigation of Semiconductor Crystals Structure of Deep Impurity States of II, III, IV Group Elements in IV-VI Semiconductors Coexistence of Large and Small Radius Electron States on Defect and Problem of Charge Photo-Transfer in Ruby Two-Level Correlated Model for Recombination in y,e-Irradiated Silicon Fluctuation-Slow-Interface-Traps Surface Coulomb Traps Impurity Polarizability in Silicon Due to the Magnetic Degeneracy of Donor States in a Finite Magnetic Field New Ideas Concerning the Nitrogen Donor States in Noncubic SiC Basing on the High-Resolution EPR Data Definition of the Off-Center Positions Coordinates of Boron in 6H SiC from High-Resolution EPR Spectra EPR and DLTS of Point Defects in Silicon Carbide Crystals Electronic Structure of Boron in Silicon Carbide EPR of the Antisite Defect in Epitaxial Layers of 4H SiC Electron Structure of 11B Impurity in 6H SiC Crystal Measured by Endor Models of Impurity Boron in Various SiC Polytypes Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres

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詳細情報

• NII書誌ID(NCID): BA27353934
• ISBN:
  • 0878496661
• 出版国コード: us
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: [Zug], Switzerland ; Scitec Publications
• ページ数/冊数: 678 p.
• 大きさ: 25 cm
• 分類:
  • LCC : QC611.6.D4
  • DC19 : 537.6/22
• 件名:
  • LCSH : Semiconductors -- Defects -- Congresses