Current trends in heterojunction bipolar transistors
著者
書誌事項
Current trends in heterojunction bipolar transistors
（Selected topics in electronics and systems, v. 2）
World Scientific, c1996
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注記
Includes bibliographical references
内容説明・目次
内容説明
Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
目次
- HBT overview, scaling and integration with other devices, P. Asbeck and F. Chang
- AlGaAs/GaAs HBT for analog and digital applications, K.C. Wang et al
- HBTs for microwave power applications, B. Bayraktaroglu and A. Higgins
- ballistic collector transistor (BCT) and its impact on high speed circuits, T. Ishibashi and Y. Yamauchi
- InP HBTs for high speed and low power circuit applications, W. Stanchina
- recent development in InGaP HBTs, W. Liu
- SiGe HBTs - device, fabrication and circuit applications, B. Meyerson
- noise characteristics of HBTs, Y.K. Chen
- GaAs HBT reliability, H. Sugahara.
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