Silicon carbide and related materials, 1995 : proceedings of the Sixth International Conference, Kyoto, Japan, 18-21 September 1995
Author(s)
Bibliographic Information
Silicon carbide and related materials, 1995 : proceedings of the Sixth International Conference, Kyoto, Japan, 18-21 September 1995
(Institute of Physics conference series, no. 142)
Institute of Physics Pub., c1996
Available at 13 libraries
  Aomori
  Iwate
  Miyagi
  Akita
  Yamagata
  Fukushima
  Ibaraki
  Tochigi
  Gunma
  Saitama
  Chiba
  Tokyo
  Kanagawa
  Niigata
  Toyama
  Ishikawa
  Fukui
  Yamanashi
  Nagano
  Gifu
  Shizuoka
  Aichi
  Mie
  Shiga
  Kyoto
  Osaka
  Hyogo
  Nara
  Wakayama
  Tottori
  Shimane
  Okayama
  Hiroshima
  Yamaguchi
  Tokushima
  Kagawa
  Ehime
  Kochi
  Fukuoka
  Saga
  Nagasaki
  Kumamoto
  Oita
  Miyazaki
  Kagoshima
  Okinawa
  Korea
  China
  Thailand
  United Kingdom
  Germany
  Switzerland
  France
  Belgium
  Netherlands
  Sweden
  Norway
  United States of America
Note
"Proceedings of the International Conference on Silicon Carbide and Related Materials, 1995 (ICSCRM-95) held on 18-21 September 1995 in Kyoto, Japan"--CIP pref.
Includes bibliographical references and index
Description and Table of Contents
Description
The special advantages of silicon carbide and related materials such as III-V nitrides in applications in hostile environments and for blue-light-emitting diodes continue to stimulate research and development activity. The International Conference on Silicon Carbide and related Materials is now the established forum for exchanging information on advances in this subject.
This volume includes both invited and contributed papers covering the whole field of silicon carbide and related materials research, from the fundamental physics of these materials, through their growth, control of properties, characterization, surface and interface modification, device processing and fabrication, to simulation and modelling. Materials scientists, electronic engineers and solid state physicists who work with these materials, as well as those who are contemplating research in this expanding field, will find this a unique single source of information.
Table of Contents
Preface. Plenary (2 papers). Crystal growth of SiC (60 papers). Characterization of SiC (56 papers). Processing of SiC devices (41 papers). SiC devices (44 papers). Growth and characterization of III-nitride (36 papers). Device processing of III-nitrides (15 papers). Amorphous SiC and other related materials (17 papers). Author index.
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