Silicon carbide and related materials, 1995 : proceedings of the Sixth International Conference, Kyoto, Japan, 18-21 September 1995
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書誌事項
Silicon carbide and related materials, 1995 : proceedings of the Sixth International Conference, Kyoto, Japan, 18-21 September 1995
（Institute of Physics conference series, no. 142）
Institute of Physics Pub., c1996
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注記
"Proceedings of the International Conference on Silicon Carbide and Related Materials, 1995 (ICSCRM-95) held on 18-21 September 1995 in Kyoto, Japan"--CIP pref.
Includes bibliographical references and index
内容説明・目次
内容説明
The special advantages of silicon carbide and related materials such as III-V nitrides in applications in hostile environments and for blue-light-emitting diodes continue to stimulate research and development activity. The International Conference on Silicon Carbide and related Materials is now the established forum for exchanging information on advances in this subject.
This volume includes both invited and contributed papers covering the whole field of silicon carbide and related materials research, from the fundamental physics of these materials, through their growth, control of properties, characterization, surface and interface modification, device processing and fabrication, to simulation and modelling. Materials scientists, electronic engineers and solid state physicists who work with these materials, as well as those who are contemplating research in this expanding field, will find this a unique single source of information.
目次
Preface. Plenary (2 papers). Crystal growth of SiC (60 papers). Characterization of SiC (56 papers). Processing of SiC devices (41 papers). SiC devices (44 papers). Growth and characterization of III-nitride (36 papers). Device processing of III-nitrides (15 papers). Amorphous SiC and other related materials (17 papers). Author index.
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