Defect recognition and image processing in semiconductors 1995 : proceedings of the sixth International Conference, held in Boulder, Colorado, 3-6 December 1995
著者
書誌事項
Defect recognition and image processing in semiconductors 1995 : proceedings of the sixth International Conference, held in Boulder, Colorado, 3-6 December 1995
（Institute of Physics conference series, no. 149）
Institute of Physics Pub., c1996
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注記
Includes bibliographical references and indexes
内容説明・目次
内容説明
These proceedings provide an overview of research into defect inhomogeneities semiconductor materials and (as grown) devices.
Defect inhomogeneities affect the performance of both as grown and processed semiconductors. A valuable overview of mapping and microscopy techniques for the study of such defects and an insight into the effect of such defects on device performance.
目次
Preface. Special invited session (4 papers). Defect studies on GaAs materials and devices (7 papers). Poster section (18 posters). Electron beam techniques (4 papers). Defect studies of optical materials (4 papers). Defect characterization (4 papers). Various techniques, including deep level transient spectroscopy, Raman, photoluminescence and surface photovoltaic (7 papers). Silicon (7 papers). Light scattering techniques (6 papers). Author index.
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