111-V quantum system research
Author(s)
Bibliographic Information
111-V quantum system research
（IEE materials and devices series）
Peregrinus on behalf of the Institution of Electrical Engineers, c1995
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Description and Table of Contents
Description
This volume reviews some of the most important frontiers of research with low-dimensional semiconductor structures. The contributors discuss various aspects of the properties, characterization and fabrication of these structures, which are of key significance to scientists and engineers.
Table of Contents
- Part 1 Fabrication: fabrication of GaAs quantum wire and quantum dot structures by MOCVD and investigation of their structural and electronic properties, T. Fukui
- in situ lateral patterning of GaAs surfaces - a new route to one-and zero-dimensional structures by molecular beam epitaxy, L. Daweritz and R. Notzel
- InAs quantum sheets and quantum dots in GaAs, O. Brandt
- fabrication and electronic properties of antidot superlattices, K. Ensslin and R. Schuster
- fabrication and electronic properties of coupled quantum wires, dots and rings, K. Ismail
- focused ion beam direct writing of one-dimensional FETs, A. Wieck. Part 2 Properties and characterization: high-resolution transmission electron microscopy quantum systems, M. Hohenstein and R. Bierwolf
- X-ray diffraction studies of single and multiple quantum wells, heterointerfaces and quantum wires of III-V semiconductor compounds, L. Tapfer
- magneto-optics of (Al,Ga,In)As quantum systems, N. Pulsford
- Fermi-edge singularity in (AlGaIn)As quantum systems, J. Wagner
- resonance tunnelling and electric field domain formation in Ga-As-AlAs superlattices, J. Grahn.
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