{"@context":{"owl":"http://www.w3.org/2002/07/owl#","bibo":"http://purl.org/ontology/bibo/","foaf":"http://xmlns.com/foaf/0.1/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/"},"@id":"https://ci.nii.ac.jp/ncid/BA28815886.json","@graph":[{"@id":"https://ci.nii.ac.jp/ncid/BA28815886#entity","@type":"bibo:Book","foaf:isPrimaryTopicOf":{"@id":"https://ci.nii.ac.jp/ncid/BA28815886.json"},"dc:title":[{"@value":"Material for the Gunn effect"}],"dc:creator":"[by] J. W. Orton","dc:publisher":[{"@value":"Mills & Boon"}],"dcterms:extent":"72 p.","cinii:size":"22 cm","dc:language":"eng","dc:date":"1971","cinii:ncid":"BA28815886","cinii:ownerCount":"1","foaf:maker":[{"@type":"foaf:Person","foaf:name":[{"@value":"Orton, John Wilfred"}]}],"bibo:owner":[{"@id":"https://ci.nii.ac.jp/library/FA001572","@type":"foaf:Organization","foaf:name":"山形大学 工学部図書館","rdfs:seeAlso":{"@id":"https://klibs1.kj.yamagata-u.ac.jp/opac/search?target=local&searchmode=complex&autoDetail=true&s_ncid=BA28815886"}}],"bibo:lccn":["72182907"],"rdfs:seeAlso":[{"@id":"https://lccn.loc.gov/72182907"}],"prism:publicationDate":["1971"],"cinii:note":["Includes bibliographical references"],"dc:subject":["LCC:TK7872.G8","DC:621.381/32/3"],"foaf:topic":[{"@id":"https://ci.nii.ac.jp/books/search?q=Gunn+effect","dc:title":"Gunn effect"},{"@id":"https://ci.nii.ac.jp/books/search?q=Gallium+arsenide+semiconductors","dc:title":"Gallium arsenide semiconductors"}],"dcterms:isPartOf":[{"@id":"https://ci.nii.ac.jp/ncid/BA21897179#entity","dc:title":"M & B monographs, . Electrical Engineering ; EE/3","@type":"bibo:Book"}],"dcterms:hasPart":[{"@id":"urn:isbn:026351773X"}]}]}