Rare earth doped semiconductors II : symposium held April 8-10, 1996, San Francisco, California, U.S.A.
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Bibliographic Information
Rare earth doped semiconductors II : symposium held April 8-10, 1996, San Francisco, California, U.S.A.
（Materials Research Society symposium proceedings, v. 422）
Materials Research Society, c1996
- : alk paper
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Includes bibliographical references and indexes
Description and Table of Contents
Description
Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.
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