Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A.
著者
書誌事項
Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A.
（Materials Research Society symposium proceedings, vol. 421）
Materials Research Society, 1996
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注記
Includes bibliographical references and index
内容説明・目次
内容説明
III-V semiconductors have continued to find new applications in optical data transmission, full-color displays, automotive electronics and personal communication systems. Complex epitaxial growth, processing, device design and circuit architecture are all necessary for realization of these elements. This book brings together the diverse group of scientists and researchers that are required to develop the next-generation devices. The wide bandgap nitrides, GaN, AlN, InN and their alloys are featured. The commercial availability of blue- and green-light-emitting diodes based on the InGaN/AlGaN system, and the recent announcement of pulsed operation of a laser diode, have stimulated interest in the growth, characterization and processing of these materials. Potential applications in high-temperature/high-power electronics appear promising because of the good transport properties of these nitrides. Topics include: growth and characterization; photonics and processing; electronics and processing; wide bandgap semiconductors and novel devices and processing.
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