Growth and characterisation of semiconductors : papers contributing to a short course
著者
書誌事項
Growth and characterisation of semiconductors : papers contributing to a short course
Institute of Physics Publishing, 1991 printing, c1990
Reprinted with corrections
大学図書館所蔵 全4件
注記
Bibliography: 234 p.
内容説明・目次
内容説明
This book explains and evaluates methods used to grow and characterise low-dimensional semiconductor structures. It is based on course material developed in association with the London University Interdisciplinary Research Centre for Semiconductor Materials. It is written for graduates in physics, materials science and electrical engineering working in the research and development of semiconductors.
目次
The basics of epitaxy (D W Pashley). Metal organic chemical vapour deposition (MOCVD) for the preparation of semiconductor materials and devices (J O Williams). Growth of thin films and heterostructures of III-V compounds by molecular beam epitaxy (C T Foxon and B A Joyce). Scanning electron microscopy (SEM) microcharacterisation of semiconducting materials and devices (D B Holt). Depth profiling of semiconductor materials by secondary ion mass spectrometry (J B Clegg). Localised vibrational mode spectroscopy of impurities in semiconductor crystals (R C Newman). Point defect studies using electron paramagnetic resonance (R C Newman). Photoluminescence characterisation (E C Lightowlers). Hall, magnetoresistance and infrared conductivity measurements (R A Stradling). Characterisation of semiconductors by capacitance methods (D W Palmer). High resolution electron microscopy of semiconductors (J L Hutchison).
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