Si, Ge, C (Diamond), GaAs, GaP, GaSb, InAs, InP, InSb

Author(s)

• Levinshteĭn, M. E. (Mikhail Efimovich)
• Rumyantsev, S.
• Shur, Michael

Bibliographic Information

Si, Ge, C (Diamond), GaAs, GaP, GaSb, InAs, InP, InSb

editors, M. Levinshtein, S. Rumyantsev, M. Shur

（Handbook series on semiconductor parameters, v. 1）

World Scientific, c1996

Note

Includes bibliographical references

Description and Table of Contents

Description

The Handbook Series on Semiconductor Parameters will consist of 5 volumes and will include data on the most popular semiconductor materials. These volumes aim to be a basic reference for scientists, engineers, students and technicians working in semiconductor materials and devices. The books have been kept compact but comprehensive and contain the values of frequently needed parameters selected and commented by leading experts on these materials. The first volume will include data on Si, Ge, diamond, GaAs, GaP, GaSb, InAs, InP, and InSb.

Table of Contents

• Si, M.E. Levinshtein and S. Rumyantsev
• Ge, L.E. Vorob'ev
• C (diamond), G. Gindenblat and P. Schmidt
• GaAs, M.E. Levinshtein and S. Rumyantsev
• GaP, Yu A. Goldberg
• GaSb, A. Ya Vul'
• InAs, Maya P. Mikhaylova
• InP, Natalya M. Schmidt
• InSb, Yu A. Goldberg.

by "Nielsen BookData"

Details

• NCID: BA29685287
• ISBN:
  • 9810229348
• Country Code: si
• Title Language Code: eng
• Text Language Code: eng
• Place of Publication: Singapore
• Pages/Volumes: xiii, 218 p.
• Size: 23 cm
• Classification:
  • NDC8 : 549.8
• Subject Headings:
  • LCSH : Compound semiconductors
• Parent Bibliography ID:
  • BA29685447