Topics in growth and device processing of III-V semiconductors
Author(s)
Bibliographic Information
Topics in growth and device processing of III-V semiconductors
（International series on advances in solid state electronics and technology / founding editor: Chih-Tang Sah）
World Scientific, c1996
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Description and Table of Contents
Description
This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
Table of Contents
- MOMBE epitaxial growth
- growth of HBT structures
- heteroepitaxy
- implant doping and isolation
- rapid thermal annealing
- wet and dry etching
- hydrogen in III-V's
- HBT processing and devices
- novel FET structures.
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