1996 International Conference on Simulation of Semiconductor Processes and Devices : SISPAD '96, September 2-4, 1996, Toyo University, Hakusan Campus, Tokyo, Japan

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書誌事項

1996 International Conference on Simulation of Semiconductor Processes and Devices : SISPAD '96, September 2-4, 1996, Toyo University, Hakusan Campus, Tokyo, Japan

sponsored by Japan Society of Applied Physics, IEEE Electron Devices Society ; in cooperation with Institute of Electronics, Communication and Information Engineers, IEEE Electron Devices Tokyo Chapter

Business Center for Academic Societies, c1996 , Copies available at IEEE Service Center, c1996

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タイトル別名

96TH8095

大学図書館所蔵 件 / 全1件

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注記

"IEEE catalog number 96TH8095"--T.p. verso

Includes bibliographical references and index

内容説明・目次

内容説明

This conference is aimed at providing an opportunity for the presentation and discussion of the recent topics in process, device and circuit modeling for semiconductors. The proceedings contains all papers presented at the conference which are carefully selected by experts in the field. A valuable source and indispensable for all scientists and engineers engaged in research and development in semiconductor devices, the proceedings include a wide range of TCAD algorithms to user interfacesProcess Modeling; Impurity Modeling; Future Device Modeling; Advanced Silicon Device Modeling; Equipment and Topography Modeling; Mesh Generation and Circuit Model

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