Secondary ion mass spectrometry : SIMS X : Proceedings of the Tenth International Conference on Secondary Ion Mass Spectrometry (SIMS X) : University of Muenster, Muenster, Germany October 1-6th, 1995

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Secondary ion mass spectrometry : SIMS X : Proceedings of the Tenth International Conference on Secondary Ion Mass Spectrometry (SIMS X) : University of Muenster, Muenster, Germany October 1-6th, 1995

editors, A. Benninghoven ... [et al.]

Wiley, c1997

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内容説明・目次

内容説明

This volume contains the proceedings of the 10th International Conference on Secondary Ion Mass Spectrometry (SIMS X), held in Munster, Germany, 1-6 October 1995. Subjects range from environmental problems to depth profiling and semiconductors. The text provides an overview of contemporary research and technology by experts in their specialist fields. Over 200 papers are included in the following categories: plenary lectures; invited lectures; imaging; sputtering and ion formation; data processing; depth profiling; surface analysis; semiconductors and microelectronics; molecular overlays; quantification; organic material and polymers; positionization; life sciences; materials sciences; combined techniques; molecular SIMS - ion formation; molecular SIMS: applications; and instrumentation.

目次

  • Partial table of contents:
  • PLENARY LECTURES
  • Biosurfaces: A Communications Link Between Solids and Cells (B. Ratner)
  • INVITED LECTURES
  • Cluster Emission in Sputtering (A. Wucher & M. Wahl)
  • IMAGING
  • Analysis of an LCD Device by SIMS (T. Yamamoto, et al.)
  • SPUTTERING AND ION FORMATION
  • Competitive Oxygen Enhancement (E. Brown & P. Williams)
  • DATA PROCESSING
  • SIMS - On the Internet (R. Lareau, et al.)
  • DEPTH PROFILING
  • Depth Resolution Parameters and Separability (M. Dowsett)
  • SURFACE ANALYSIS
  • The Characterization of Fluorolubricants on 8mm Video Tape by TOF-SIMS (T. Hoshi & M. Tozu)
  • SEMICONDUCTORS/MICROELECTRONICS
  • Altered Layer Formation in SiGe (W. De Coster, et al.)
  • MOLECULAR OVERLAYERS
  • Combined SXM/SIMS Investigation of Damage Effects in Molecular Overlayers (G. Becker, et al.)
  • QUANTIFICATION
  • Statistical Process Control (SPC) for SIMS (R. Hockett, et al.)
  • ORGANIC MATERIAL/POLYMERS
  • TOF-SIMS Analysis of a Bio-Polymer (F. Lang, et al.)
  • POSTIONIZATION
  • Quantification of B and As Depth Profiles with Resonant Post-Ionisation Mass Spectrometry (P. De Bisschop, et al.)
  • LIFE SCIENCES
  • Determination of Cyclosporine Metabolites by TOF-SIMS (K. Meyer, et al.)
  • MATERIAL SCIENCES
  • SIMS Analysis of Nitrided Iron and Steel (T. Wu, et al.)
  • MISCELLANEOUS
  • Detection of Mineral Collectors by TOF-LIMS (S. Chryssoulis, et al.)
  • COMBINED TECHNIQUES
  • Quantification and Standardization of LIMS Analysis of Mineral Surfaces (S. Dimov & S. Chryssoulis)
  • MOLECULAR SIMS: ION FORMATION
  • Images of Biologic Tissue Beyond the Static SIMS Limit (P. Todd, et al.)
  • MOLECULAR SIMS: APPLICATIONS
  • Imaging of Langmuir Blodgett Layers by TOF-SIMS (H. Rulle, et al.)
  • INSTRUMENTATION
  • A New Setup for Accelerator-SIMS (R. Ender, et al.).

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