Transient capacitance measurements of deep level defects introduced in γ-ray compensated germanium by long-term annealing at room temperature
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書誌事項
Transient capacitance measurements of deep level defects introduced in γ-ray compensated germanium by long-term annealing at room temperature
（AAEC/E, 501）
Australian Atomic Energy Commission, Research Establishment, 1980.9
