Transient conductance spectroscopy measurements of defect states in γ-irradiated n-channel silicon field effect transistors with possible γ-dosemeter applications
Author(s)
Bibliographic Information
Transient conductance spectroscopy measurements of defect states in γ-irradiated n-channel silicon field effect transistors with possible γ-dosemeter applications
（AAEC/E, 504）
Australian Atomic Energy Commission, Research Establishment, 1980.12
Available at / 1 libraries
-
No Libraries matched.
- Remove all filters.
