Transient conductance spectroscopy measurements of defect states in γ-irradiated n-channel silicon field effect transistors with possible γ-dosemeter applications

著者

• Pearton, S. J.
• Tavendale, A. J.
• Williams, A. A.

書誌事項

Transient conductance spectroscopy measurements of defect states in γ-irradiated n-channel silicon field effect transistors with possible γ-dosemeter applications

by S. J. Pearton, A. J. Tavendale, A. A. Williams

（AAEC/E, 504）

Australian Atomic Energy Commission, Research Establishment, 1980.12

詳細情報

• NII書誌ID(NCID): BA32550978
• ISBN:
  • 0642597030
• 出版国コード: at
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Lucas Heights
• ページ数/冊数: 11 p.
• 大きさ: 30 cm
• 親書誌ID:
  • BA32546347