C, H, N and O in Si and characterization and simulation of materials and processes : proceedings of Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and other Elemental Semiconductors, and Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes of the 1995 E-MRS Spring Conference, Strasbourg, France, May 22-26, 1995
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Bibliographic Information
C, H, N and O in Si and characterization and simulation of materials and processes : proceedings of Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and other Elemental Semiconductors, and Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes of the 1995 E-MRS Spring Conference, Strasbourg, France, May 22-26, 1995
（European Materials Research Society symposia proceedings, 56）
Elsevier, 1996
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"Reprinted from Materials science and engineering volumes B36 (1-3) ... and B37 (1-3)"--T.p. verso
Includes bibliographical references and indexes
Description and Table of Contents
Description
This collection of symposia papers is divided into two sections. The first presents a state-of-the-art review of the topic - carbon, hydrogen, nitrogen, and oxygen in silicon and in other elemental superconductors. The second section deals with two areas: advanced instrumentation allowing for direct access to atomic mechanisms; and technological development, which, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturization race, a precise mastery of the microscopic mechanisms.
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