Selected topics in group IV and II-VI semiconductors : proceedings of Symposium L, 6th International Symposium on Silicon Molecular Beam Epitaxy, and Symposium D on Purification, Doping and Defects in II-VI Materials of the 1995 E-MRS Spring Conference, Strasbourg, France, May 22-26, 1995
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書誌事項
Selected topics in group IV and II-VI semiconductors : proceedings of Symposium L, 6th International Symposium on Silicon Molecular Beam Epitaxy, and Symposium D on Purification, Doping and Defects in II-VI Materials of the 1995 E-MRS Spring Conference, Strasbourg, France, May 22-26, 1995
（European Materials Research Society symposia proceedings, v. 54）
Elsevier, 1996
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注記
Includes bibliographical references and indexes
内容説明・目次
内容説明
This collection of symposia papers is divided into two sections. The first part is concerned with silicon molecular beam epitaxy, and presents an overview of research in the subject. The second section discusses the problems of purification, doping and defects of II-VI materials, mainly of the important semiconductors CdTe and ZnSe. The focus is on materials science issues which are the key for a better understanding of these materials and for any industrial application.
目次
- Part 1 Symposium L - 6th International Symposium on Silicon Molecular Beam Epitaxy: optical properties
- superlattices
- material analysis
- strain adjustment
- competing technologies
- devices
- nanometer structures
- growth and equipment
- two-dimensional carriers
- novem materials. Part 2 Symposium D - purification, doping and defects in II-VI materials: thermodynamics - bulk growth
- doping and purification
- defects
- compensation
- diffusion
- transition elements and photofractivity.
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