High brightness light emitting diodes

著者

• Stringfellow, G. B. (Gerald B.)
• Craford, M. George

書誌事項

High brightness light emitting diodes

volume editors, G.B. Stringfellow, M. George Craford

（Semiconductors and semimetals, v. 48）

Academic Press, c1997

注記

Includes bibliographical references and index

内容説明・目次

内容説明

Volume 48in the Semiconductors and Semimetals series discusses the physics and chemistry of electronic materials, a subject of growing practical importance in the semiconductor devices industry. The contributors discuss the current state of knowledge and provide insight into future developments of this important field.

目次

• Materials issues in high brightness light emitting diodes, G.B. Stringfellow
• overview of device issues in high brightness light emitting modes, M.G. Craford
• AIGaAs red LEDs, F.M. Steranka
• OMVPE growth of AIGaInP for high-efficiency visible light emitting diodes, M.J. Peanasky and C.P. Kuo
• AIGaInP light-emitting diodes, F.A. Kish and R.M. Fletcher
• applications for high brightness LEDs, M.W. Hodapp
• organometallic vapour phase epitaxy of GaN for high brightness blue light emitting diodes, I. Akasaki and H. Amano
• III-V nitride based uv/blue/green/yellow LEDs and LDs, S. Nakamura.

「Nielsen BookData」 より

詳細情報

• NII書誌ID(NCID): BA32973428
• ISBN:
  • 0127521569
• 出版国コード: us
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: San Diego ; Tokyo
• ページ数/冊数: xiv, 469 p.
• 大きさ: 24 cm
• 親書誌ID:
  • BA00240449