Gallium nitride (GaN)
著者
書誌事項
Gallium nitride (GaN)
（Semiconductors and semimetals, v. 50,
Academic Press, c1998-
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注記
Includes bibliographical references and index
内容説明・目次
- 巻冊次
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1 ISBN 9780127521589
内容説明
Gallium Nitride (GaN) has become the most important semiconductor material under study worldwide today. The general interest in this new materials system is growing stronger, especially with the announcement of the first GaN laser. There is an entire range of important applications which are detailed in this book. The combination of properties offered by GaN, such as direct bandgap, large range of energy bandgaps in the alloy system, and extraordinary mechanical stability, makes this material extremely important for future industrial applications as well.
目次
- Metal-organic chemical vapour deposition (MOCVD) of Group III nitrides, S.P. DenBaars, S. Keller
- Growth of the Group IIIA nitrides b reactive sputtering, W.A. Bryden, T.J. Kistenmacher
- Thermochemistry of III-N semiconductors, N. Newman
- Etching of III-nitrides, S.J. Pearton, R.J. Shul
- Indium-based nitrides compounds, S.M. Bedair
- Crustal structure of Group III nitrides, A. Trampert et al
- Electronic and optical properties of III-v nitride-based quantum wells and superlattices, H. Markoc et al
- Doping in the II-nitrides, K. Doverspike, J.I. Pankave
- Pressure studies of defects and impurities in gallium nitride, T. Suski, P. Perlin
- Optical properties of GaN, B. Monemar
- Band structure of the Group III nitrides, W.R.L. Lambrecht
- Phonons and phase transitions in GaN, N.E. Christensen, P. Perlin
- Applications, S. Nakamura
- Lasers, I. Akasaki, H. Amano
- III-v nitrides based X-Ray detector, C.H. Qiu, J.I. Pankawe
- Nonvolatile random-access memories in wide band-gap semiconductors, J.A. Cooper, Jr.
- 巻冊次
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2 ISBN 9780127521664
内容説明
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
目次
List of Contributors. R.J. Molnar, Hydride Vaper Phase Epitaxial Growth of III-V Nitrides. T.D. Moustakas, Growth of III-V Nitrides by MBE. Z. Lilental-Weber, Defects in Bulk GaN and Homeopitaxial Layers. C.G. Van de Walle and N.M. Johnson, Hydrogen in III-V Nitrides. W. Gotz and N.M. Johnson, Characterization of Dopants and Deep Level Defects in Gallium Nitride. B. Gil, Stress Effects on Optical Properties. C. Kisielowski, Strain in GaN Thin Films and Heterostructures. J.A. Miragliotta and D.K. Wickenden, Nonlinear Optical Properties of Gallium Nitride. B.K. Meyer, Magnetic Resonance Investigations on Group III-Nitrides. M.S. Shur and M.A. Khan, GaN and AIGaN Ultraviolet Detectors. C.H. Qui and J.I. Pankove, III-V Nitride Based X-Ray Detectors. Subject Index. Contents of Volumes in This Series.
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