Silicon carbide : a review of fundamental questions and applications to current device technology
Author(s)
Bibliographic Information
Silicon carbide : a review of fundamental questions and applications to current device technology
Akademie, c1997
1st ed
- : set
- v. 1
- v. 2
- Other Title
-
Physica status solidi
Available at / 7 libraries
-
Kyoto Institute of Technology Library図
v. 1549.8||Si4||19300262232,
v. 2549.8||Si4||29300262243 -
Katsura Library, Kyoto University図
v. 1549.8||S||18||1200005111285,
v. 2549.8||S||18||2200005111294 -
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Note
Vol. 1. Reprinted from a special issue of the journal, Physica Status Solidi (b)-basic research
Vol. 2. Reprinted from a special issue of the journal, Physica Status Solidi (a)-applied research
Description and Table of Contents
Description
This collection of papers gives a review of a rapidly developing subject: the theoretical discussion, the characterization, and the application of silicon carbide as a promising material in semiconductor technology.
Table of Contents
- Theory
- crystal growth
- characterization of defects
- processing
- devices.
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