Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997

著者

• International Conference on Defects in Semiconductors
• Davies, Gordon
• Nazaré, Maria Helena

書誌事項

Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997

editors, Gordon Davies and Maria Helena Nazaré

（Materials science forum, v. 258-263）

Trans Tech Publications, c1997

• : set
• pt. 1
• pt. 2
• pt. 3

内容説明・目次

内容説明

Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold. Volume is indexed by Thomson Reuters CPCI-S (WoS).

目次

Recent Measurements and Theory Relating to Impurity-Induced LVMS in GaP and GaAs Optically-Induced Defects in Si-H Nanoparticles Defects and Doping in III-V Nitrides A Programme for the Future? The Hydrogen-Saturated Self-Interstitial in Silicon and Germanium Matrix-Induced Isotope Shift of a Vibrational Mode of Interstitial Oxygen in Germanium Isotopic Shifts of the Rotational States of Interstitial Oxygen in Germanium DLTS Combined with Perturbed Angular Correlation (PAC) on Radioactive 111In Atoms in Ge Microscopic Study of the Vacancy and Self-Interstitial in Germanium by PAC Localization of Nondegenerate Electrons at Random Potential of Charged Impurities Resonance Acceptor States and THz Generation in Uniaxially Strained p-Ge Ionized Impurity Scattering in Isotopically Engineered, Compensated Ge:Ga,As Defects in SiGe Acceptor States in Boron Doped SiGe Quantum Wells Substitutional Carbon in Ge and Si1-xGex. Ge Content Dependence of the Infrared Spectrum of Interstitial Oxygen in Crystalline Si-Ge Optical Investigation of Ge-Rich Ge1-xSix (0 x 0.1) Alloys Electrical Characterization of Electron Beam Induced Defects in Epitaxially Grown Si1-xGex Lattice Defects in Si1-xGex Epitaxial Diodes Induced by 20-MeV Alpha Rays Positron Annihilation Study of Electron-Irradiated Silicon-Germanium Bulk Alloys Electronic Properties of Defects Introduced in n- and p-Type Si1-xGex During Ion Etching The Role of Non-Radiative Defects in Thermal Quenching of Luminescence in SiGe/Si Structures Grown by Molecular Beam Epitaxy Gold-Related Levels in Relaxed Si1-xGex Alloy Layers: A Study of the Pinning Effect Dislocation-Related Electronic States in Strain-Relaxed Si1-xGex/Si Epitaxial Layers Grown at Low Temperature Dislocation Activities in Bulk GeSi Crystals Schottky Diodes on Si1-x-yGexCy Alloys: Measurement of Band Off-Set by DLTS Molecular-Dynamics Simulations of Microscopic Defects in Silicon Comparison of Muonium (Hydrogen) Dynamics in Germanium and Silicon Hydrogenation and Passivation of B in Si by Boiling in Water Pressurized up to 10 ATM Low Temperature Hydrogen Diffusion in Silicon: Influence of Substrate Quality and the Surface Damage Mechanism of Ultrasonic Enhanced Hydrogenation in Poly-Si Thin Films Hydrogen Molecules in Crystalline Silicon Thermal Stability of Hydrogen Molecule in Crystalline Silicon Emission and Capture Kinetics for a Hydrogen-Related Negative-U Center in Silicon: Evidence for Metastable Neutral Charge State IR Studies of Si-H Bond-Bending Vibrational Modes in Si Optical Absorption Due to Hydrogen Bound to Interstitial Si in Si Crystal Grown in Hydrogen Atmosphere Trapping Site of Hydrogen Molecule in Crystalline Silicon Formation and Structure of Hydrogen Molecules in Crystalline Si Structure and Charge-State-Dependent Instability of a Hydrogen-Carbon Complex in Silicon The Trapping of Hydrogen at Carbon Defects in Silicon The M-Line (760.8 me V) Luminescence System Associated with the Carbon-Hydrogen Acceptor Centre in Silicon Interstitial Carbon-Hydrogen Defects in Silicon Low-Temperature Migration of Hydrogen and Interaction with Oxygen Anomalous Shift of the 1075 cm-1 Oxygen-Hydrogen Defect in Silicon Vibrational Absorption from Oxygen-Hydrogen (Oi-H2) Complexes in Hydrogenated CZ Silicon The I Centre: A Hydrogen Related Defect in Silicon Theory of Gold-Hydrogen Complexes in Silicon Electrically Active Silver-Hydrogen Complexes in Silicon Palladium-Hydrogen Related Complexes in Silicon Effects of Hydrogen Plasma on Dislocation Motion in Silicon Hydrogenation of Copper Related Deep States in n-Type Si Containing Extended Defects Hydrogenation of Deep Defect States in n-Type Si Containing Extended Defects and Transition Metal (Ni or Fe) Metastable Defects and Recombination in Hydrogenated Amorphous Silicon Tracing Diffusion by Laplace Deep-Level Spectroscopy Defects in AS-Grown Silicon and their Evolution During Heat Treatments An Investigation of the Possibility that Oxygen Diffusion in Czochralski Silicon is Catalyzed during Clustering Temperature-Dependent Widths of Infrared and Far-Infrared Absorption Lines of Oxygen in Silicon The Oxygen Dimer in Silicon: Some Experimental Observations Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 DegreesC High-Field EPR Spectroscopy of Thermal Donors in Silicon Shallow Thermal Donors in Annealed CZ Silicon and Links to the NL10 EPR Spectrum: The Relevance of H, Al and N Impurities Formation of Ultra Shallow Donors in Silicon by Long-Term-Annealing at 470 DegreesC Local Vibrational Modes of Weakly Bound O-H Complexes in SI Phonon Scattering in Heat-Treated Cz-Silicon Determination of Stoichiometry and Oxygen Content in Platelike and Octahedral Oxygen Precipitates in Silicon with FT-IR Spectroscopy Influence of the Li Concentration on the Photoluminescence Spectra of Neutron-Irradiated Silicon:Passivation of Radiation Induced Centers Electric-Dipole Spin Resonance of Be-Doped Silicon Cadmium-Related Defects in Silicon: Electron-Paramagnetic-Resonance Identification Iron in p-Type Silicon: A Comprehensive Model Moessbauer Spectroscopy of Fe in Silicon with the Novel Laser-Ionized 57Mn+ Ion Beam at Isolde Recombination-Enhanced Fe Atom Jump of Fe-Acceptor Pairs in Si Precipitation of Iron in FZ and CZ Silicon The Orthorhombic FeIn Complex in Silicon Copper in Silicon: Quantitative Analysis of Internal and Proximity Gettering A Study of the Copper-Pair Related Centers in Silicon The Photoluminescence of Pt-Implanted Silicon Identification of the Si:Au and Si:Pt 1S3/2( 8)+ Phonon-Assisted Fano Resonance Silver-Related Donor Defect in Silicon Isolated Substitutional Silver and Silver-Induced Defects in Silicon: An Electron Paramagnetic Resonance Investigation Pseudo or Deep Donor Excitation Spectra in Silicon Vacancies and Interstitial Atoms in e -Irradiated Silicon Vacancy Aggregates in Silicon Identification of VH in Silicon by EPR Novel Luminescent Centres in Cadmium Doped Silicon Defect Clusters in Silicon: Impact on the Performance of Large-Area Devices Modeling of Self-Interstitial Clusters and their Formation Mechanism in Si Self-Interstitials in Irradiated Silicon High Resolution EELS Study of Extended Defects in Silicon Electron Irradiation Effects in Silicon Thin Foils Under Ultra-High Vacuum Environment Application of Spin Dependent Recombination for Investigation of Point Defects in Irradiated Silicon Electrical and Optical Characterisation of Defects Induced in Epitaxially Grown n-Si During 1 keV Noble Gas Ion Bombardment Fano Resonance in a Vibronic Sideband in Silicon Frenkel Pairs and Impurity-Defect Interactions in p-Type Silicon Irradiated with Fast Electrons and Gamma-Rays at Low Temperatures Impurity-Vacancy Complexes Formed by Electron Irradiation of Czochralski Silicon Luminescence Centers in High-Energy Ion-Implanted Silicon Performance Degradation of Microcrystalline Silicon-Based p-i-n Detectors Upon He4 Irradiation Persistent Excited Conductivity Induced by Proton Irradiation in a-Si:H Photoluminescence Centers Associated with Noble-Gas Impurities in Silicon Implantation of Reactive and Unreactive Ions in Silicon Photoluminescence Vibrational Spectroscopy of Defects Containing the Light Impurities Carbon and Oxygen in Silicon Raman Scattering Measurements in Neutron-Irradiated Silicon Recombination Centers in Electron Irradiated Si and GaAs Study of a Li- and C-Related Center Formed at High Annealing Temperatures in Neutron-Irradiated FZ Silicon Doped with Li The Influence of Accumulated Defects on the Lateral Spread of Implanted Ions Structural Change and Relaxation Processes of Tetrahedral Point Defects The Jahn-Teller Effect and the Structure of Monovacancies in Si, SiC and C Transient Lattice Vibration Induced by Successive Carrier Captures at a Deep-Level Defect and the Effect on Defect Reactions Characterisation of Recombination Centres in Solar Cells by DLTS Defect-Engineering Rad-Hard Detectors for the CERN LHC Theory of 3d Transition Metal Defects in 3C-SiC A Deep Photoluminescence Band in 4H SiC Related to the Silicon Vacancy Thermal Activation Energies for the Three Inequivalent Lattice Sites for the BSi Acceptor in 6H-SiC Optical Absorption and Zeeman Study of 6H-SiC:Cr High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC Gas and Heat Treatment Effects on the Defect Structure of a-SiC:H Films Capacitance Spectroscopy of Deep Centres in SiC Native and Electron Irradiation Induced Defects in 6H-SiC Raman Scattering Analysis of Defects in 6H-SiC Induced by Ion Implantation Vacancy-Type Defects in Proton-Irradiated SiC Theoretical Studies on Defects in SiC Formation and Relaxation of Hydrogen-Related Defects in the Subsurface Region of Diamond Films Hydrogen and Hydrogen-Like Defects in Diamond Fine Structure of the Boron Bound Exciton in Diamond Investigation of Ion-Implanted Boron in Diamond Isotopic Shifts of the N3 Optical Transition in Diamond Breakdown of the Vacancy Model for Impurity-Vacancy Defects in Diamond A First Principles Study of Interstitial Si in Diamond Radiation Damage of Silicon and Diamond by High Energy Neutrons, Protons and Particles Study of Defects in Diamond Films by Electrical Measurements Valence Controls and Codoping for Low-Resistivity n-Type Diamond by Ab Initio Molecular-Dynamics Simulation Intrinsic Modulation Doping in InP-Based Heterostructures Pressure Dependent Two-Dimensional Electron Transport in Defect Doped InGaAs/InP Heterostructures Study of Iron-Related Defects in SI-InP by Positron Annihilation Spectroscopy Homogeneity of Fe-Doped InP Wafers Using Optical Microprobes Osmium Related Deep Levels in p-InP and their Interaction with Alpha Radiation A Sharp Defect-Annealing Stage Below Room Temperature in Irradiated N-Type Indium Phosphide Alpha Radiation-Induced Deep Levels in p-InP Site Stability, Diffusion, and Charge Dynamics for Muonium in GaAs Structure and Reorientation of the SiAs-H and ZnGa-H Complexes in Gallium Arsenide Ab Initio Study of the CAs Local Oscillator in Gallium Arsenide Spectroscopy of Nitrogen-Related Centers in Gallium Arsenide Atomic Configuration of Oxygen Negative-U Center in GaAs Ga Vacancies as Compensating Centers in Homogeneously or -Doped GaAs(Si) Layers Positron Annihilation and Scanning Tunneling Microscopy Used to Characterise Defects in Highly Si-Doped GaAs Chemical Trends in Electronic Properties of Arsenic Vacancy-3d Transition Metal Pairs in Gallium Arsenide Perturbed Angular Correlation Measurements and Lattice Site Location of Br in GaAs Equilibrium Vacancies in Te-Doped GaAs Studied by Positron Annihilation Spectroscopic Investigation of Neutral Niobium in GaAs Yb Luminescence Centres in MBE-Grown and Ion-Implanted GaAs Arsenic Interstitial Pairs in GaAs Electrical Properties of Low Temperature Grown GaAs Traps Found in GaAs MESFETs: Properties Location and Detection Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors Creation of GaAs Antisites in GaAs by Transmutation of Radioactive 71AsAs to Stable 71GaAs Defect Control in As-Rich GaAs As Antisite-Related Defects Detected by Spin-Dependent Recombination in Delta-Doped (Si) GaAs Grown by MBE at Low Temperature Electrically Detected Magnetic Resonance at Different Microwave Frequencies Metastable Antisite Pair in GaAs Theoretical Study of Antistructure Defects in GaAs Study of Plastically Deformed Semiconductors by Means of Positron Annihilation The Micro Structure of the EL2 Defect in GaAs - A Different Look to Former Spin Resonance Data Detection and Identification of the EL2 Metastable in GaAs Defects in Thick Epitaxial GaAs Layers Effects of Copper Diffusion on the Native Defect EL2 in GaAs EL2 Induced Enhancement of the Donor Acceptor Pair Luminescence in GaAs Observation of Persistent Electron Capture in N-Type Gallium Arsenide Studied by Optically Detected Magnetic Resonance ODMR Investigation of Proton Irradiated GaAs Uniaxial-Stress Symmetry Studies on the E1, E2 and E3 Irradiation-Induced Defects in Gallium Arsenide Magnetic Resonance and Positron Annihilation of Intrinsic Acceptors in ITC-Treated GaAs Defects in Neutron Irradiated, LEC Semi-Insulating GaAs Electrical Characterization of Defects Introduced During Plasma-Based Processing of GaAs Metastable Charge Recovery in Plasma-Irradiated -GaAs Metastable Amorphous Structure in Ion Implanted GaAs Theory of Nitrogen-Hydrogen Complexes in GaP Photoluminescence, Optical Absorption, and EPR Studies of the Co2+-SP Pair Defect in GaP Resonance-Mode Phonon Replica in the Optical Spectra of Transition-Metal Impurities in GaP GaN Grown Using Trimethylgallium and Triethylgallium ODMR Studies of AS-Grown and Electron-Irradiated GaN and AlN Electrical and Optical Characterization of Defects in GaN Generated by Ion Implantation Implantation Doping and Hydrogen Passivation of GaN Electrically and Optically Detected Magnetic Resonance in GaN-Based LEDs Donor-Acceptor Pair Transitions in GaN AB Initio Studies of Atomic-Scale Defects in GaN and AlN Photoluminescence Dynamics in the Near Bandgap Region of Homoepitaxial GaN Layers Zeeman Study of the 0.9 eV Emission in AlN and GaN A First-Principles Study of Mg-Related Defects in GaN Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN On the Origin of the Yellow Donor-Acceptor Pair Emission in GaN Blue Emission in Mg Doped GaN Studied by Time Resolved Spectroscopy GaN Doped with Sulfur Identification of Iron Transition Group Trace Impurities in GaN Bulk Crystals by Electron Paramagnetic Resonance Local Vibrational Modes at Transition-Metal Impurities in Hexagonal AlN and GaN Crystals Local Vibrational Modes at AsN in Cubic GaN: Comparing Ab-Initio Calculations to a Semi-Empirical Model A Codoping Method in GaN Proposed by Ab Initio Electronic-Structure Calculations Photoluminescence of Donor Acceptor Pair Transitions in Hexagonal and Cubic MBE-Grown GaN Raman Scattering from Defects in GaN Structural and Electrical Properties of Threading Dislocations in GaN Defects Analysis in Strained InAlAs and InGaAs Films Grown on (111)B InP Substrates Irradiation Induced Lattice Defects in In0.53Ga0.47As Pin Photodiodes Acceptor-Hydrogen Interaction in InAs Electroluminescence of III-Nitride Double Heterostructure Light Emitting Diodes with Silicon and Magnesium Doped InGaN Effect of Neutron Irradiation on Ga-Based Semiconductors Polaron Coupling for Sulphur Impurity in GaSb Resonant Interaction Between Local Vibrational Modes and Extended Lattice Phonons in AlSb Defect Reactions in Low Temperature Electron Irradiated AlAs Investigated by Measurements of the Lattice Parameter Transition from Tunneling to Poole-Frenkel Type Transport in Aluminum-Nitride Growth Surface Dependence of Cathodoluminescence of Cubic Boron Nitride N-Vacancy Defects in c-BN and w-BN Multiphonon-Assisted Tunnel Ionisation of Deep Impurities in High-Frequency Electric Field Long-Range Lattice Relaxation for Donor Centers in Supercell Method Decay Kinetics of Growth-Induced Alignment of the First Neighbor Shell of CAs in AlxGa1-xAs Plausible Evidence of Existence of Deep Acceptors in Si -Doped AlGaAs Magneto-Optical and Magnetic Resonance Investigations of Intrinsic Defects in Electron-Irradiated n-Type AlxGa1-xAs Gallium Interstitials in GaAs/AlGaAs Heterostructures Investigated by Optically and Electrically Detected Magnetic Resonance ODMR Investigations of Ge Acceptors in p-Type Al0.4Ga0.6As Inverted Charge States of Anion and Cation-Site Vacancies in Zinc Blende Semiconductors:Theory Degradation in II-VI Laser Diodes Defect Characterization of II-VI Compound Semiconductors Using Positron Lifetime Spectroscopy Defect Structures in Heavily In-Doped II-VI Semiconductors The Role of Cation Vacancy in Compensation of II-VI Compounds by Fast Diffusors - Example of Cu in CdS Experimental Evidence for the Two-Electron Nature of In-Related DX States in CdTe Nature of Dislocation-Related Deep Level Defects in CdS NMR Study of Carrier States and Trapping Complexes in the Transparent Conductor ZnO:MIII Cathodoluminescence Study on the Hydrogenation of ZnO Luminescence Observation of Frenkel Pairs on Both Sublattices of Electron Irradiated ZnSe Interface Defects and their Effect on the Electrical Properties of ZnSe/GaAs Heterojunctions Grown by MBE Donor Doping of ZnSe: Lattice Location and Annealing Behavior of Implanted Boron Determination of the Lattice Site of Nitrogen after Implantation into ZnSe Charge Transfer at Ti Ions in ZnTe Bistable Centers in CdMnTeSe:In and CdMnTe:Ga Crystals Studied by Light-Induced Gratings Deep Levels in Cd0.99Mn0.01Te:Ga Vacancy-Type Defects in Electron and Proton Irradiated II-VI Compounds UV Enhanced and Solar Blind Photodetectors Based on Large-Band-Gap Materials Lattice Relaxation of In Donors in CdF2 Shallow Electron Centres in CdF2:M3+ and Silver Halides EPR Investigation of Metastable Donor States in CdF2:In, Ga Photoinduced Magnetism in CdF2 with Bistable Donors: The Clue for the Negative U? Evidence of Metastable Deep Acceptors in AgGaS2 from Time-Resolved Emission A Positron Lifetime Study of Lattice Defects in Chalcopyrite Semiconductors Magnetooptical Characterization of CuIn(Ga)Se2 Defects Spectroscopy in ss-Ga2O3 Bistability of Oxygen Vacancy in Silicon Dioxide Energy Transfer Processes at Erbium Ions in Silicon Energy Transfer Rate Between Erbium 4f Shell and Si Host Photoluminescence Study of Erbium in Silicon with a Free-Electron Laser Direct Evidence for Stability of Tetrahedral Interstitial Er in Si up to 900 DegreesC Photo- and Electroluminescence of Erbium-Doped Silicon Donor Centers in Er-Implanted Silicon Structural Defects and Photoluminescence in Dislocation-Rich Erbium-Doped Silicon Influence of Fabrication Conditions on Properties of Si:Er Light-Emitting Structures High Temperature Luminescence Due to Er in Porous Si Electron Paramagnetic Resonance of Erbium in Bulk Silicon Carbide Crystals 1.54 m Luminescence in Er and Er+O Implanted 6H SiC Erbium Related Defects in Gallium Arsenide Electron Spin Resonance of Er-Oxygen Complexes in GaAs Er Centers in GaAs Studied by Optical Spectroscopy Under Hydrostatic Pressure EXAFS Measurement on Local Structure Around Erbium Atoms Doped in GaAs with Oxygen Co-Doping Luminescence and Annealing Studies of Er-Implanted GaN with and without Oxygen Co-Doping Er-Luminescence in MBE-Grown AlGaAs Crystal-Field Transitions of Nd3+ and Er3+ in Perovskite-Type Crystals Excitation and De-Excitation of Erbium Ions in Semiconductor Matrices Mechanism of Generation of F-F Radiation in Semiconductor Heterostructures Infrared Induced Emission From Silicon Quantum Wires Acceptor States in Boron Doped SiGe Quantum Wells Coulomb Interaction between Carriers Localized in InAs/GaAs Quantum Dots and on Point Defects Influence of Erbium Doping on Structure and Optical Properties of the InGaAs/GaAs Superlattices Defect Formation During Laser Induced Intermixing of GaAs/AlGaAs Multiple-Quantum-Well Structures Localized Epitaxy for Vertical Cavity Surface Emitting Laser Applications The Long Wavelength Luminescence Observation from the Self-Organized InGaAs Quantum Dots Grown on (100) GaAs Substrate by Metalorganic Chemical Vapor Deposition. Deep Hole Traps in Be-Doped Al0.5Ga0.5 As MBE Layers Nanotubes and Pinholes in GaN and their Formation Mechanism Defect-Related Recombination Processes in Low-Dimensional Structures of ZnCdSe/ZnSe, CdTe/CdMnTe and GaAs/AlGaAs Study of Hole Traps in p-Type ZnSe and ZnSSe Epilayers by DLTS and Admittance Spectroscopy Auger-Type Nonradiative Recombination Processes in Bulk and in Quantum Well Structures of II-VI Semiconductors Containing Transition Metal Ions Spin-Dependent Processes in Self-Assembly Impurity Quantum Wires Comparison between AS-Grown and Annealed Quantum Dots Morphology EPR Studies of Magnetic Superlattices Er Diffusion and Er-Induced Ga-Al Interdiffusion in GaAs/AlGaAs Quantum Structures Ground and Excited States of D Centres in Semiconductor Quantum Dots Electron Spin Resonance Features of the Pb1 Interface Defect in Thermal (100)Si/SiO2 Silicon Surface Defects: The Roles of Passivation and Surface Contamination Heat-Treatment Induced Modifications of Porous Silicon Luminescence Due to Electron-Hole Condensation in Silicon-On-Insulator and its Application to Defect and Interface Characterization Deep Electronic States at the Inverted AlAs/GaAs Interface Under Different Growth Modes TEM-Study of Frank Partial Dislocations in ZnSe/GaAs(001) Caused by Substrate-Preparation Defect Formation and Electronic Transport at AlGaN/GaN Interfaces Characterization of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al2O3(0001) Studied by TEM Formation Kinetics of the Al-Related Shallow Thermal Donors: A Probe for Oxygen Diffusion in Silicon Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in Silicon EPR Evidence of Hydrogen-Enhanced Diffusion of Aluminum in Silicon Segregation of Gold at Dislocations Confirmed by Gold Diffusion into Highly Dislocated Silicon Annealing of Low-Temperature Substitutional Gold in Silicon: Ring-Diffusion of Substitutional Gold in Silicon Rate Limiting Mechanism of Transition Metal Gettering in Multicrystalline Silicon Intrinsic Point Defect Engineering in Silicon High-Voltage Power Device Technology Influence of the Dislocation Loops on the Anomalous Diffusion of Fe Implanted into InP Lithium Induced Vacancy Formation and its Effect on the Diffusivity of Lithium in Gallium Arsenide Ab-Initio Investigations on Diffusion of Halogen Atoms in GaAs Low Temperature Intrinsic Diffusion Coefficient of Lithium in GaAs Low Temperature Impurity Diffusion into Large-Band-Gap Semiconductors Background Doping Effects on Zn Diffusion in GaAs/AlGaAs Multiple-Quantum-Well Structures

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詳細情報

• NII書誌ID(NCID): BA34772482
• ISBN:
  • 0878497862
  • 0878497870
  • 0878497889
  • 0878497897
• 出版国コード: sz
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Zürich, Switzerland
• ページ数/冊数: 3 v. (xl, 1864 p.)
• 大きさ: 25 cm
• 親書誌ID:
  • BA00294222