Diffusion in semiconductors
Author(s)
Bibliographic Information
Diffusion in semiconductors
（Landolt-Börnstein Zahlenwerte und Funktionen aus Naturwissenschaften und Technik, Neue Serie / Gesamtherausgabe, K.-H. Hellwege, New series,
Springer, c1998
- Other Title
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Landolt-Börnstein Numerical data and functional relationships in science and technology
Available at / 22 libraries
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National Institutes of Natural Sciences Okazaki Library and Information Center図
403/L22/3-33-A9108047521
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The Institute for Solid State Physics Library. The University of Tokyo.図書室
403:L2:3/33a7210141706
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Note
CD-ROM in pocket at back cover
Description and Table of Contents
Description
Subvolume A of two subvolumes on Diffusion in Semiconductors and Non-Metallic Solids consists of a comprehensive and critical compilation of data for the following materials and properties: diffusion in silicon, germanium and their alloys, diffusion in compound semiconductors, diffusion in silicides, chemical diffusion in bulk inhomogeneous semiconductors, grain-boundary and dislocation diffusion in semiconductors and silicides and surface diffusion on semiconductors. Although most of the silicides are not semiconducting, this chapter is included here because a number of them have become integrated in the Si technology and because they were not covered in the previous volume III/26 on diffusion in metallic substances. Subvolume A contains a CD-ROM.
Table of Contents
From the Contents: Atomic Fluxes.- Equations for diffusion.- Atomic mechanisms of diffusion.- Methods of measuring diffusion coefficients.- Temperature, pressure and mass dependence of diffusion.- Diffusion in elementary semiconductors.- Diffusion in compound semiconductors.- Diffusion in silicides.- Chemical diffusion.- Grain-boundary and dislocation diffusion.- Surface diffusion
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