Handbook of III-V heterojunction bipolar transistors
著者
書誌事項
Handbook of III-V heterojunction bipolar transistors
Wiley, c1998
- : cloth : alk. paper
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注記
"A Wiley-Interscience publication."
Includes bibliographical references and index
内容説明・目次
内容説明
Heterojunction bipolar transistors (HBT) offer substantial improvements in performance over the silicon bipolar transistor. HBTs will permit performance improvements by combining high speeds with low power requirements. Important applications are found in such fields as wireless communications, power amplifiers, mixers and frequency synthesizers.
目次
- Basic Properties and Device Physics of III--V Materials.
- Two--Terminal Heterojunction Devices.
- D.C.
- Current Gain.
- Nonideal D.C.
- Characteristics.
- Thermal--Electrical Properties.
- Collapse of Current Gain.
- Failure Mechanisms and Reliability Issues.
- Small--Signal Properties.
- Epitaxial Layer Design.
- Geometrical Layout Design.
- Power Amplifier.
- Distortion and Noise.
- Switching Characteristics and Spice Models.
- Transistor Fabrication.
- Measured Transistor Performances.
- Appendices.
- Glossary of Symbols.
- Index.
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