Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
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Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
（Materials science forum, v. 264-268）
Trans Tech Publications, c1998
- : set
- pt. 1
- pt. 2
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Description and Table of Contents
Description
Volume is indexed by Thomson Reuters CPCI-S (WoS).
This two-volume set documents the present understanding of many topics of interest, such as the growth of bulk crystals, the growth of epitaxial layers, theoretical modelling, the characterization of as-grown material, the development of suitable processes and of electronic devices which can operate under extreme conditions and exhibit outstanding properties.
Table of Contents
Sponsors and Committees
Preface
SiC Seeded Boule Growth
High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport
Sublimation Growth of 50mm Diameter SiC Wafers
Experimental Investigation of 4H-SiC Bulk Crystal Growth
Step Structures and Structural Defects in Bulk SiC Crystals Grown by Sublimation Method
Influence of the Growth Direction and Polytype on the Stacking Fault Generation in -SiC
X-Ray Section Topographic Investigation of the Growth Process of SiC Crystals
Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals
The Structural Evolution of Seed Surfaces During the Initial Stages of Physical Vapor Transport SiC Growth
Defect Formation Mechanism of Bulk SiC
Enlargement of SiC Crystals: Defect Formation at the Interfaces
Impurity Incorporation During Sublimation Bulk Crystal Growth of 6H- and 4H-SiC
Optically Transparent 6H-Silicon Carbide
Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer, Mass Transport and Heat of Crystallization and Results on its Experimental Verification
Modeling Analysis of Temperature Field and Species Transport Inside the System for Sublimation Growth of SiC in Tantalum Container
A Coupled Finite Element Model for the Sublimation Growth of SiC
Studies on SiC Liquid Phase Crystallization as Technique for SiC Bulk Growth
Dissolution and Growth of Silicon Carbide Crystals in Melt-Solutions
Sublimation Growth of Bulk -SiC Crystals on (100) and (111) -SiC Substrates
SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE Reactor
Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications
Growth and Characterisation of SiC Power Device Material
Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD
Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition
Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle Dependence
Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC
Boron Compensation of 6H Silicon Carbide
CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal Plane
Homoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD Reactor
Growth of 4H and 6H SiC Trenches and Around Stripe Mesas
Planar 6H-SiC p-n Junctions Prepared by Selective Epitaxial Growth
Epitaxial Growth of SiC on -SiC Using Si2Cl6+C3H8+H2 System
High Growth Rate of -SiC by Sublimation Epitaxy
The Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy Technique
Domain Occurance in SiC Epitaxial Layers Grown by Sublimation
Epitaxy of High Quality SiC Layers by CST
Wetting Properties and Interfacial Energies in Liquid Phase Growth of -SiC
High Quality 6H- and 4H-SiC pn Structures with Stable Electric Breakdown Grown by Liquid Phase Epitaxy
Thick Film SiC Epitaxy for 'Filling Up' Micropipes
A New Radiation Heated 4 Inch LPCVD System for -SiC Heteroepitaxy
Epitaxial Growth in 3C-SiC without Carbonization Process Using 1,3-Disilabutane
Growth and Characterization of SiC Films on Large-Area Si Wafers by APCVD - Temperature Dependence
CVD Growth Mechanism of 3C-SiC on Si Substrates
Growth of Epitaxial Cubic SiC Thin Films Using Single Source Precursors
Crystallinity of 3C-SiC Films Grown on Si Substrates
Effects of Void Formation on Electrical and Optical Properties of 3C-SiC on Si(111) Substrates
The Mechanism of Void Formation in the Growth of 3C-SiC Thin Film on Si Substrate
Study of Initial Stage of SiC Growth on Si(100) Surface by XPS, RHEED and SEM
Surface Morphology of 3C-SiC Heteroepitaxial Layers Grown by LPCVD on Si Substrates
Effect of Substrate Bias on 3C-SiC Deposition on Si by AC Plasma-Assisted CVD
Mechanisms of SiC Formation in the Ion Beam Synthesis of 3C-SiC Layers in Silicon
Formation and Prevention of Micropipes and Voids in CVD Carbonization Experiments on (100) Silicon
Fabrication of 3C-SiC on SiO2 Structures Using Wafer Bonding Techniques
Growth Mode and Kinetics of Atmospheric Pressure Chemical Vapour Deposition of -SiC on Si(100) Substrate
Germanium as a Possible Surfactant for Growth of Beta Silicon Carbide on Silicon Substrates
Gas Source Molecular Beam Epitaxial Growth of 3C-SiC on Si with Heterointerface Modification by a Si-C-Ge Ternary System
Heteroepitaxial Growth of SiC on Si by Gas Source MBE with Silacyclobutane
Heteroepitaxial Growth of 3C-SiC on Surface-Structure-Controlled MBE Layer by Low-Pressure CVD
Formation of Pyramidal Pits at the Interface of 3C-SiC and Si(001) Substrates Grown by Gas Source MBE
Growth of SiC Layers on (111) Si by Solid Source Molecular Beam Epitaxy
Improved Epitaxy of Cubic SiC Thin Films on Si(111) by Solid-Source MBE
Observation of 3-Fold Periodicity in 3C-SiC Layers Grown by MBE
Electronic Properties of SiC Polytypes and Heterostructures
Band Structure Interpretation of the Optical Transitions between Low-Lying Conduction Bands in n-Type Doped SiC Polytypes
Calculated Density of States and Carrier Concentration in 4H- and 6H-SiC
Theoretical Studies on Defects in SiC
An ab initio Study of Native Defects in Cubic SiC: Vacancies and Stacking Faults
Calculation of Nonlinear Optical Susceptibilities for Different Polytypes of Silicon Carbide
Comparative Monte Carlo Study of Electron Transport in 3C, 4H and 6H Silicon Carbide
Calculation of the Anisotropy of the Hall Mobility in n-Type 4H- and 6H-SiC
The Effects of Interfacial Dipoles on the Properties of SiC-Group III-Nitride Hetero-Structures
Pressure-Dependent Dynamical and Dielectric Properties of GaN and AlN
Theoretical and Experimental Study of the Lattice-Dynamical Properties of Cubic GaN
Electronic States of BC2N Heterodiamond (111) Superlattices
From Precursor Atoms Towards Hetero-Phases: Strain-Dynamics Induced Carbon-Rich Si1-xCx Phases
Large Unit Cell Superstructures on Hexagonal SiC-Sufaces Studied by LEED, AES and STM
Surface Reconstructions of 6H-SiC(0001) and Surface-Structure-Controlled Epitaxial Growth
Electronic and Atomic Structure of the C-Terminated 6H-SiC Surface
Deposition of Cs on Graphitized 4H-SiC Surfaces
Theory of Si-Rich SiC Surfaces: Consequences for Epitaxial Growth
Polarity Dependent Step Bunching and Structure of Hexagonal SiC Surfaces
Collective Surface Excitations in 3C-SiC(100)
FTIR-ATR Analysis of SiC(000-1) and SiC(0001) Surfaces
Polytype and Surface Characterization of Silicon Carbide Thin Films
Characterization of Mechanically Polished Surfaces of Single Crystalline 6H-SiC
AFM Study of In Situ Etching of 4H and 6H SiC Substrates
Surface Morphology Improvement of SiC Epitaxy by Sacrificial Oxidation
The Formation of Super-Disolcation/Micropipe Complexes in 6H-SiC
High Resolution Photoemission Study of the 6H-SiC/SiO2 Interface
Combined Ab Initio Total Energy Density Functional Calculations and Scanning Tunneling Microscopy Experiments of the -SiC(001) c(4x2) Surface
Angle-Resolved Photoemission Study of the -SiC(100)-(2x1)-Surface
Self-Organized One-Dimensional Si Atomic Chains on Cubic Silicon Carbide Surface
High Resolution Photoemission Spectroscopy Using Synchrotron Radiation Study of the SiO2/ -SiC(100)3x2 Interface Composition
Raman Investigation of Stress Relaxation at the 3C-SiC/Si Interface
Extended Defects in SiC and GaN Semiconductors
Defect Characterization of Homo-Epitaxially Grown 6H-SiC on (0001) Silicon and (000-1) Carbon Faces
Transmission Electron Microscopy Investigation of Defects in B-Implanted 6H-SiC
The Origin of Triangular Surface Defects in 4H-SiC CVD Epilayers
Gaseous Etching for Characterization of Structural Defects in Silicon Carbide Single Crystals
Equilibrium Growth Morphologies of SiC Polytypes
Experimental Studies of Hollow-Core Screw Dislocations in 6H-SiC and 4H-SiC Single Crystals
Structural Characterization of SiC Crystals Grown by Physical Vapor Transport
Investigation of Polymorphism and Estimation of Lattice Constants of SiC Epilayers by Four Circle X-Ray Diffraction
Site Identification of 6H-SiC Using RBS/Channeling Technique
Structural Characterization of 3C-SiC Epitaxially Grown on Si-On-Insulator
Electronic Properties of Doped SiC at Elevated Temperatures Studied by Raman Scattering
Optical Properties of Silicon Carbide: Some Recent Developments
Boron Four Particle Acceptor Bound Exciton Complex in 4H SiC
Phosphorus Four Particle Donor Bound Exciton Complex in 6H SiC
Some Aspects of the Photoluminescence and Raman Spectroscopy of (10-10)- and (11-20)-Oriented 4H and 6H Silicon Carbide
The Neutral Silicon Vacancy in 6H and 4H SiC
Bound Exciton Recombination in Electron Irradiated 4H-SiC
Characterization of Deep Levels in SiC by Photoluminescence Spectroscopy and Mapping
Time Resolved PL Study of Multi Bound Excitons in 3C SiC
Changes in the Exciton-Related Photoluminescence of 4H- and 6H-SiC Induced by Uniaxial Stress
DII Revisited in an Modern Guise - 6H and 4H SiC
Near Band-Gap Emission in V-Implanted and Annealed 4H-SiC
Photoluminescence and Backscattering Characterization of 6H SiC Implanted with Erbium and Oxygen Ions
Luminescence Properties of Er Implanted Polycrystalline 3C SiC
Measurement of High Field Electron Transport in Silicon Carbide
Ionization Rates and Critical Fields in 4H SiC Junction Devices
Measurement of the Hall Scattering Factor in 4H SiC Epilayers from 40K to 290K and up to Magnetic Fields of Nine Tesla
Electrical Conductivity of Single-Crystalline Bulk 6H-SiC and Epitaxial Layers of AlN in the Temperature Range 300-2300 K
Monitory Carrier Lifetime Measurements in 6H-SiC Using the Photoconductive Decay Technique
Depth- and Time-Resolved Free Carrier Absorption in 4H SiC Epilayers: A Study of Carrier Recombination and Transport Parameters
Evaluation of Auger Recombination Rate in 4H-SiC
Ground States of the Ionized Isoelectronic Ti Acceptor in SiC
Radiotracer Identification of Ti, V and Cr Band Gap States in 4H- and 6H-SiC
Deep Levels in SiC:V by High Temperature Transport Measurements
Deep Level Defect Study of Ion Implanted (Ar, Mg, Cr) n-Type 6H-SiC by Deep Level Transient Spectroscopy
Oxygen-Related Defect Centers in 4H Silicon Carbide
Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC
Observation of Metastable Defect in Electron Irradiated 6H-SiC
Electrically Active Defects in n-Type 4H- and 6H-SiC
Phonon Spectrum of Band-to-Band Optical Transitions in 6H-SiC as Determined by Optical Admittance Spectroscopy
Electrical and Transmission Electron Microscopy Characterisation of 4H-SiC Homoepitaxial Mesa Diodes
High-Temperature Annealing of 6H-SiC Single Crystals and the Site-Competition Processes
Electronic Structure of Acceptors in Silicon Carbide
High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC
On the Identification of an Al Related Deep Centre in 4H-SiC - Self-Compensation in SiC?
X-Band ENDOR of Boron and Beryllium Acceptors in Silicon Carbide
Optically Detected Magnetic Resonance Studies of Non-Radiative Recombination Centres in 6H SiC
Chromium in 4H and 6H SiC: Photoluminescence and Zeeman Studies
Electron Paramagnetic Resonance of Erbium in Bulk Silicon Carbide Crystals
Characterization of Defects in Electron Irradiated 6H-SiC by Positron Lifetime and Electron Spin Resonance
ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-Electrons
Distribution of Paramagnetic Defects in 3C-SiC Epitaxial Films Grown by LPCVD Method with Alternate Gas Supply
Experimental and Theoretical Analysis of the High Temperature Thermal Conductivity of Monocrystalline SiC
Deformation of Monocrystalline 6H-SiC
Measurement of the Thermal Conductivity of Thin -SiC Films between 80 K and 600 K
Spatial Uniformity of the Mechanical Properties of 3C-SiC Films Grown on 4-Inch Si Wafers as a Function of Film Growth Conditions
The Measurement of the Thickness of Thin SiC Layers on Silicon
Thickness Contour Mapping of SiC Epi-Films on SiC Substrates
Infrared Reflectance of Extremely Thin AlN Epi-Films Deposited on SiC Substrates
Cathodoluminescence of Defect Regions in SiC Epi-Films
Contactless Measurement of the Thermal Conductivity of Thin SiC Layers
Cross-Sectional Micro-Raman Spectroscopy: A Tool for Structural Investigations of Thin Polytypic SiC Layers
A Non-Destructive Technique for High Field Characterization of Gate Insulators in SiC MOS Capacitors
Raman Determination of Stresses and Strains in 3C-SiC Films Grown on 6-Inch Si Substrates
Conductivity Control of SiC by In-Situ Doping and Ion Implantation
Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competition Epitaxy
Coimplantation Effects on the Electrical Properties of Boron and Aluminium Acceptors in 4H-SiC
Electrical Characterization of p-Type 6H-SiC Layers Created by C and Al Co-implantation
Effects of Al-C Ion-Implantation and Annealing in Epitaxial 6H-SiC Studied by Structural and Optical Techniques
Energy Order Effect of Aluminium Multiple Implantation in 6H-SiC
Implantation of Al and B Acceptors into Alpha-SiC and pn Junction Diodes
Electrical Activation of B Implant in 6H-SiC
Post-Implantation Annealing of Aluminium in 6H-SiC
The Characterization of SiC Hot-Implanted with Ga +
Ion Implantation Doping in SiC and its Device Applications
Hot-Implantation of Phosphorus Ions into 6H-SiC
Raman, Low Temperature Photoluminescence and Transport Investigation of N-Implanted 6H-SiC
Investigation of Ion-Impantation Induced Damage in 6H-SiC by RSB/C and PAS
Analysis of Aluminium Ion Implantation Damage into 6H-SiC Epilayers
Stoichiometric Disturbances in Ion Implanted Silicon Carbide
6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering
Study of Thermal Annealing of Vacancies in Ion Implanted 3C-SiC by Positron Annihilation
Effect of Hot Isostatic Press Annealing for Ion-Implanted Silicon Carbide
Ion Beam Synthesis: A Novel Method of Producing (SiC)1-x(AIN)x Layers
A Computational Model for the Formation of (SiC)1-x(AIN)x Structures by Hot, High-Dose N+ and Al+ Co-Implants in 6H-SiC
Deuterium Incorpoation in Acceptor Doped Epitaxial Layers of 6H-SiC
Silicon Carbide on Insulator Formation by the Smart CUT (R) Process
Delamination of Thin Layers in H+ Implanted Silicon Carbide
Metal Disilicide Contacts to 6H-SiC
Formation of Tungsten Ohmic Contact on n-Type 6H-SiC by Pulsed Laser Processes
Laser Alloying for Ohmic Contacts on SiC at Room Temperature
Thermostable Ohmic Contacts on p-Type SiC
Ohmic Contacts to p-Type SiC with Improved Thermal Stability
A High Temperature Stable Metallization Scheme for SiC-Technology Operating at 400 DegreesC in Air
Phase Formation Sequence of Nickel Silicides from Rapid Thermal Annealing of Ni on 4H-SiC
Thermal Stability of Sputtered TiN as Metal Gate on 4H-SiC
Schottky Barrier Height in Metal-SiC Contact - New Approach to Modelling
Nanometer-Scale Investigation of Schottky Contacts and Conduction Band Structure on 4H-, 6H- and 15R-SiC Using Ballistic Electron Emission Microscopy
Physical and Electrical Characterization of WN Schottky Contacts on 4H-SiC
Sputter-Etching as a Surface Preparation Technique for Schottky Contacts
Mechanism of Reactive Ion Etching of 6H-SiC in CHF3/O2 Gas Mixtures
Fast and Anisotropic Reactive Ion Etching of 4H and 6H SiC in NF3
Inductively Coupled Plasma Etching of SiC for Power Switching Device Fabrication
Etching Kinetics of -SiC Single Crystals by Molten KOH
Deep States in SiO2/p-Type 4H-SiC Interface
Effects of the Cooling-Off Condition on the Oxidation Process in 6H-SiC
Effect of Post-Metal Annealing on the Quality of Thermally Grown Silicon Dioxide on 6H- and 4H-SiC
Low Interface State Density Oxides on P-Type SiC
Observation of Carbon Clusters at the 4H-SiC/SiO2 Interface
Interface State Density at Implanted 6H SiC/SiO2 MOS Structures
Electrical Properties and Reliability of Vapor Jet Deposited Oxide on SiC
Improving SiO2 Grown on P-Type 4H-SiC by NO Annealing
Rapid Anodic Oxidation of 6H-SiC
Comparison of SiO2 and AIN as Gate Dielectric for SiC MOS Structures
Metal-Nitride-Semiconductor Capacitors on 6H-SiC
Surface Micromachining of Polycrystalline SiC Deposited on SiO2 by APCVD
Behaviour of Polycrystalline SiC and Si Surface-Micromachined Lateral Resonant Structures at Elevated Temperatures
Recent Advances in SiC Power Devices
Vital Issues for SiC Power Devices
Silicon Carbide High Frequency Devices
Wide Dynamic Range RF Mixers Using Wide-Bandgap Semiconductors
Electrothermal Simulation of 4H-SiC Power Devices
High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers
6H-SiC Schottky Diode Edge Terminated Using Amorphous SiC by Sputtering Method
Effect of Surface Preparation and Thermal Anneal on Electrical Characteristics of 4H-SiC Schottky Barrier Diodes
High Voltage Schottky Barrier Diodes on P-Type 4H and 6H-SiC
High Voltage 4H SiC Rectifiers Using Pt and Ni Metallization
Medici Simulation of 6H-SiC Oxide Ramp Profile Schottky Structure
A Dual-Metal-Trench Schottky Pinch-Rectifier in 4H SiC
Characterization of Power MESFETs on 4h-SiC Conductive and Semi-Insulating Wafers
Silicon Carbide MESFET's for High-Power S-Band Applications
Temperature Dependent Small- and Large-Signal Performance of 4H-SiC MESFET's
Voltage Handling Capability and Microwave Performance of a 4H-SiC MESFET - A Simulation Study
Evaluating the Three Common SiC Polytypes for MESFET Applications
Effect of Device Temperature on RF FET Power Density
Theoretical Investigation of the Electrical Behavior of SiC MESFETs for Microwave Power Amplification
MESFETs and MOSFETs on Hydrogen-Terminated Diamond Surfaces
On the Interpretation of High-Frequency Capacitance Data of SiC MOS Structures: The Effect of Thermal Non-Equilibrium
Charge Pumping Measurements on SiC MOSFETs
1400 V 4H-SiC Power MOSFETs
High Voltage Planar 6H-SiC ACCUFET
Inversion Layer Mobility in SiC MOSFETs
Dependence of Channel Mobility on the Surface Step in Orientation in Planar 6H-SiC MOSFETs
High-Voltage (2.6 kV) Lateral DMOSFETs in 4H-SiC
Impact Ionization in 6H-SiC MOSFETs
Interface States and Field-Effect Mobility in 6H-SiC MOS Transistors
Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays
Differences between Interfacial Bonding Chemistry at SiC-SiO2 Interfaces Prepared by Low-Temperature Remote Plasma-Assisted Oxidation and High Temperature Conventional Thermal Oxidation
Fast Generation-Recombination Channels due to Epitaxial Defects in SiC Metal-Oxide-Semiconductor Devices
6H-SiC MOS Capacitors on Sloped Surfaces: Realisation, Characterisation and Electrical Results
Computer Model Simulation of SiC Diode Reverse-Bias Instabilities due to Deep Energy Impurity Levels
Nanosecond Risetime Pulse Characterization of SiC p+n Junction Diode Breakdown and Switching Properties
Reverse Recovery and Avalanche Injection in High Voltage SiC PIN Diodes
Comparison between Aluminium and Boron-Doped Junction Termination Extensions for High Voltage 6H-SiC Planar Bipolar Diodes
Beryllium-Implanted 6H-SiC P+N Junctions
Investigation of Excess Carrier Distributions in 4H-SiC Power Diodes under Static Conditions and Turn-On
SiC Merged p-n/Schottky Rectifiers for High Voltage Applications
Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiC
Carrier Lifetime Extraction from a 6H-SiC High Voltage p-i-n Rectifier Reverse Recovery Waveform
4H-SiC Gate Turn-Off (GTO) Thyristor Development
Punch-Through Behaviour of Wide Bandgap Materials (with Example in 6H-SiC) and its Benefit to JFETs
High Temperature Performance of Implanted-Gate n-Channel JFETs in 6H-SiC
SiC Surface Engineering for High Voltage JFET Applications
Electrical Characteristics of a Novel Gate Structure 4H-SiC Power Static Induction Transistor
Studies of the Ambient Dependent Inversion of Catalytic Metal - Oxide - Silicon Carbide Devices Based on 6H- and 4H-SiC Material
SiC-Based Schottky Diode Gas Sensors
Electrical Characterization of Chemical Sensors Based on Catalytic Metal Gate - Silicon Carbide Schottky Diodes
High Temperature Piezoresistive -SiC-on-SOI Pressure Sensor for Combustion Engines
Growth of Bulk GaN by Sublimation Method
Growth and Characterization of Thin Films and Patterned Substrates of III-V Nitrides on SiC (0001) Substrates
Heteroepitaxy of Group III Nitrides for Device Applications
HVPE GaN and AIGaN 'Substrates' for Homoepitaxy
Some Features of a Nucleation Layer Growth Process and its Influence on the GaN Epilayer Quality
Formation of GaN Nano-Column Structure by Nitridation
Growth of High Quality AIN Epitaxial Films by Hot-Wall Chemical Vapour Deposition
Growth of Aluminium Nitride with Superior Optical and Morphological Properties
Monomethylsilane as a New Dopant Precursor for n-Type GaN Grown by MOVPE
Epitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs, AlAs/GaAs, and AIN Buffer Layers
Optical Properties of GaN Films Grown on SiC/Si
Modeling of the Incorporation of Aluminium in Ga1-xAlxM (M=As or N) Alloys Grown by MOCVD
MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells
MBE Growth of III-V Nitride Thin Films and Quantum Well Structures
Surface Reconstruction and As Surfactant Effects on MBE-Grown GaN Epilayers
An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN
Elaboration of III-V Nitrides Quantum Dots in Molecular Beam Epitaxy
Growth of AIN on 6H- and 4H-SiC by Gas-Source Molecular Beam Epitaxy
Molecular Beam Epitaxy Growth and Characterisation of GaAs1-xNxLayers
Effect of Elastic Strain on Growth of Ternary Group-III Nitride Compounds
Influence of Activated Nitrogen on Plasma Assisted MBE Growth of GaN
Surface Reconstruction and MBE Growth of Cubic GaN on (001) GaAs: A Total Energy Study
Growth and Characterization of High Quality Epitaxial GaN on ZnO(0001) by Reactive Molecular Epitaxy
Low Temperature Growth of Gallium Nitride on Quartz and Sapphire Substrates
STM Observation of Initial Nitridation Process of Ga on Si Substrates
Nitridation of GaAs(100) Wafers for the Preparation of Zincblende-Structure Thick GaN Layers
Magnesium-Doped GaN Films Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates
MBE Growth of Device-Quality Cubic GaN on Atomically Flat (001) GaAs Prepared by Atomic-Hydrogen Treatment at High Temperatures
Reactive UHV Sputtering and Structural Characterization of Epitaxial AlN/6H-SiC(0001) Thin Films
Magnetron Sputter Epitaxy of Gallium Nitride on (0001) Sapphire
Structural and Optical Properties of GaN Layers Directly Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy
Transmission Electron Microscopy Study of GaN on SiC on SIMOX Grown by Metalorganic Chemical Vapor Deposition
AlN Deposition by OMVPE and PLD Used as an Encapsulate for Ion Implanted SiC
The Atomic Structure of Prismatic Planar Defects in GaN/AlN Grown over Silicon Carbide and Sapphire Substrates
Surface Defects in GaN and AlxGa1-xN Epilayers Deposited on Sapphire by Organometallic Vapor Phase Epitaxy
Structural Characterisation of GaN Layers on Sapphire Grown by MOCVD
Excitonic Fine Structure and High Density Effects in GaN
Optical Transitions and Exciton Binding Energies in GaN Grown along Various Crystallographic Orientations
Free Exciton Recombination in Tensile Strained GaN Grown on GaAs
Exciton Dynamics in Homoepitaxial GaN
Exciton Dynamics of Thick GaN Epilayers Deposited by MOVPE on Al2O3
Excitonic Quantum Efficiency of GaN
Optical Absorption and Excitation Spectroscopy on GaInN/GaN Double Heterostructures and Quantum Wells
Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties
Optical Properties of InGaN/GaN Multiple Quantum Wells
Time-Resolved Spectroscopy on GaN/AlGaN Double Heterostructures and Quantum Wells
Non-Linear Exciton Spectroscopy of GaN/AlGaN Quantum Wells
Quantum Confinement Stark Effect in InGaN SQW Studied by Electric Field Modulated PL Spectra
Optical Characterization of InGaN Layers and GaN/InGaN/GaN Double Heterostructures
Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates
Room Temperature Photoluminescence Linewidth versus Material Quality of GaN
Residual Donors in GaN Epitaxial Films - A Correlation of HALL Effect, SIMS and Photoluminescence Data
Are there any Shallow Acceptors in GaN?
Crystal Structure and Optical Properties of Bulk GaN Crystals Grown from a Melt at Reduced Pressure
Characterization of GaN Quantum Dots on AlGaN/SiC Substrate Using Cathodoluminescence
Cathodoluminescence of Cubic GaN Epilayers
Optical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epytaxy on SiC/Silicon (100) Substrates
Analysis of Reflectivity Measurements for GaN Films Grown on GaAs: Influence of Surface Roughness and Interface Layers
Effect of Thermal Strain and Carrier Concentration on the Phonon Frequencies of GaN
Characterization of GaN Epilayers Grown on Sapphire and SiC Substrates
Photoluminescence and Raman Scattering Characterization of GaN, InGaN and AlGaN Films Using a UV Excitation Raman-Photoluminescence Microscope
Raman Microprobe Measurement of Under-Damped LO-Phonon-Plasmon Coupled Mode in n-Type GaN
Micro-Raman and Electron Microscopy Analysis of Cubic GaN Layers on (001) GaAs
Surface Polariton Raman Spectroscopy in Cubic GaN Epitaxial Layers
Electrical Characterization of Dopants and Deep Level Defects for III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition
Optical Admittance Spectroscopy of Deep Centers in Galliumnitride - Correlation with Photoluminescence
A Two-Band Analysis of Electrical Transport in n-Type GaN Epilayers
Electrical Characterization of the AlN/Si(111) System
Electrical and Optical Properties of Highly Strained GaN Epilayers
Investigation of Thermal Annealing Processes on the Activation of Mg Acceptors and the Structural Quality of GaN
Nanometre Scale Reactive Ion Etching of GaN Epilayers
Ti/Al and Cr/Al Ohmic Contacts to n-Type GaN Formed by Furnace Annealing
Schottky Barrier Modification on n-GaN Using a Shallow p-Type Implant
Electrical Characteristics of In Situ Grown Lateral P +N GaN Junction Diodes on Sapphire Substrates
Nitride-Based Emitters on SiC Substrates
Blue-U.V. Homojunction GaN LEDs Fabricated by MOVPE
Electroluminescence of GaN pn Diodes
Ultraviolet Stimulated Emission in GaN/AlGaN Multiple Quantum Wells
An Investigation of Breakdown Mechanisms in Al(GaN) MSM Photodetectors
High Speed, Low Noise Ultraviolet Photodetectors Based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) Structures
Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates
Two-Dimensional Electronic Transport in AlGaN/GaN Heterostructures
Annealed Si1-xCx Emitter Silicon Heterojunction Bipolar Transistors
Ultraviolet Excitonic Laser Action at Room Temperature in ZnO Nanocrystalline Epitaxial Films
Double Heterostructure Based on ZnO and MgxZn1-xO
by "Nielsen BookData"