Diffusion in silicon : 10 years of research

Author(s)

• Fisher, D. J.

Bibliographic Information

Diffusion in silicon : 10 years of research

ed. by D. J. Fisher

（Diffusion and defect data : solid state data, pt. A . Defect and diffusion forum ; v. 153-155）

Scitec Publications, c1998

Description and Table of Contents

Description

This volume presents a thorough treatment of the subject, covering a full decade of progress in the understanding of Diffusion in Silicon.

Table of Contents

Pressure and Stress Effects on Diffusion in Si Boron Diffusion in Pre-Amorphised Silicon: Interactions with the End of Range Defects Stress in Silicon Nitride Films and Its Effect on Boron Diffusion in Silicon Quantum Effects on Hydrogen Diffusion in Silicon Self-Diffusion in Silicon Diffusion of Si Adsorbates on an Si(001) Surface Vacancies and Vacancy Defects in Si Observed by Positron Annihilation Vacancy Distributions in Silicon and Methods for Their Accurate Determination Interaction and Migration Properties of Ion Beam Induced Point Defects in Crystalline Silicon: Basic Research and Technological Relevance Review of Growth Striations in CZ and MCZ Silicon Wafers Theory of Reaction-Diffusion Processes at Very High Dopant Concentrations Diffusion and Reaction Kinetics of Fast-Ion-Induced Point Defects Studied by Deep Level Transient Spectroscopy Analytical Expressions for the Length of Stacking Faults during Thermal Nitridation of Oxidized Silicon and Silicon

by "Nielsen BookData"

• NCID: BA37756540
• ISBN:
  • 3908450292
• Country Code: sz
• Title Language Code: eng
• Text Language Code: eng
• Place of Publication: Zuerich
• Pages/Volumes: iv, 555 p.
• Size: 25 cm
• Parent Bibliography ID:
  • BA07841800