Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.
著者
書誌事項
Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.
（Materials Research Society symposium proceedings, v. 512）
Materials Research Society, 1998
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注記
Includes bibliographical references and index
内容説明・目次
内容説明
Wide-bandgap semiconductors have a long and illustrious history, starting with the first paper on SiC light-emitting diodes published in 1907. Since then, interest in wide-bandgap semiconductors has skyrocketed. Improved material quality, important breakthroughs both in SiC and GaN technologies, and the emergence of blue GaN-based lasers, have stimulated this progress. To provide a fairly complete picture of this important field, most of the work presented at the conference is included in the volume. In addition, invited papers present an excellent overview of the current state of the art and offer projections for future developments. Topics include: GaN materials and devices; crystal growth; SiC materials and devices; characterization of wide-bandgap semiconductors; and processing characterization and properties of wide-bandgap materials.
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