Semiconductor process and device performance modeling : symposium held December 2-3, 1997, Boston, Massachusetts, U.S.A.
著者
書誌事項
Semiconductor process and device performance modeling : symposium held December 2-3, 1997, Boston, Massachusetts, U.S.A.
（Materials Research Society symposium proceedings, v. 490）
Materials Research Society, c1998
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注記
Includes bibliographical references and index
内容説明・目次
内容説明
The concept of a 'virtual semiconductor fab' requires a focused effort among engineering, physics, chemistry, materials, mathematical and computational sciences. Although widely used by the semiconductor industry, current technology computer-aided design (TCAD) struggles to keep pace with new generations of IC technology. The semiconductor industry needs improved, predictive physically-based modelling and simulation capabilities to decrease cost, improve efficiency, and provide TCAD tools to process developers before production begins. Without the use of more advanced next generation TCAD models, future IC technology development will slow as a result of expensive, time-consuming experimental validation of processes and device performance. This book brings together researchers from industry, universities and national laboratories to highlight advances in TCAD, and to identify critical areas for future emphasis. Both silicon and compound semiconductor process and device performance modelling are featured. Topics include: bulk process modelling; equipment modelling; topography modelling; and characterization and device modelling.
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