Devices for integrated circuits : silicon and III-V compound semiconductors

著者

    • Casey, H. Craig

書誌事項

Devices for integrated circuits : silicon and III-V compound semiconductors

H. Craig Casey, Jr

John Wiley, c1999

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注記

Includes bibliographical references and index

内容説明・目次

内容説明

This book develops the device physics of the Si and III-V compound semiconductor devices used in integrated circuits. Important equations are derived from basic physical concepts. The physics of these devices are related to the parameters used in SPICE. Terminology is intended to prepare students for reading technical journals on semiconductor devices. This text is suitable for first-year graduate students and seniors in Electrical Engineering; graduate students in Material Science and Chemical Engineering, interested in semiconductor materials; Computer Science students interested in custom VLSI design; and professionals in the semiconductor industry.

目次

Integrated Circuit Family Tree Electrons in Solids Carrier Transport and Recombination p-n Junctions: I-V Behavior p-n Junctions: Reverse Breakdown and Junction Capacitance Schottky-Barrier Devices MOS Capacitors MOS Field-Effect Transistors Bipolar Transistors Appendix I: Introduction to PSPICE

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