Fundamentals of III-V devices : HBTs, MESFETs, and HFETs/HEMTs
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Bibliographic Information
Fundamentals of III-V devices : HBTs, MESFETs, and HFETs/HEMTs
（A Wiley-Interscience publication）
Wiley, c1999
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Includes index
Description and Table of Contents
Description
A systematic, accessible introduction to III-V semiconductor devices With this handy book, readers seeking to understand semiconductor devices based on III-V materials no longer have to wade through difficult review chapters focusing on a single, novel aspect of the technology. Well-known industry expert William Liu presents here a systematic, comprehensive treatment at an introductory level. Without assuming even a basic course in device physics, he covers the dc and high-frequency operations of all major III-V devices-heterojunction bipolar transistors (HBTs), metal-semiconductor field-effect transistors (MESFETs), and the heterojunction field-effect transistors (HFETs), which include the high electron mobility transistors (HEMTs). An excellent introduction for researchers and circuit designers working on wireless communications equipment, Fundamentals of III-V Devices offers a variety of features, including:
* An introductory chapter on the basic properties, growth process, and device physics of III-V materials
* Coverage of both dc and high-frequency models, integrating aspects of device physics and circuit design
* A discussion of transistor fabrication and device comparison
* 55 worked-out examples illustrating design considerations for a given application
* 215 figures and end-of-chapter practice problems
* Appendices listing parameters for various materials and transistor types
Table of Contents
Basic Properties and Device Physics of III-V Materials.
Two-Terminal Heterojunction Devices.
HBT D.C. Characteristics.
HBT High-Frequency Properties.
FET D.C. Characteristics.
FET High-Frequency Properties.
Transistor Fabrication and Device Comparison.
Appendices.
Index.
by "Nielsen BookData"