Physics of amorphous semiconductors
著者
書誌事項
Physics of amorphous semiconductors
Imperial College Press , World Scientific [distributor], c1999
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注記
Includes bibliographical references (p. 383-409) and index
内容説明・目次
内容説明
This is a useful textbook for graduate students in the fields of solid state physics and chemistry as well as electronic engineering. Presenting the fundamentals of amorphous semiconductors clearly, it will be essential reading for young scientists intending to develop new preparation techniques for more ideal amorphous semiconductors e.g. a-Si:H, to fabricate stable and efficient solar cells and thin film transistors and new artificial amorphous materials such as multilayers for quantum devices.A large portion is devoted to the latest developments of amorphous semiconductors including electronic properties of a-Si:H, nature of weak bonds and gap states in a-Si:H, mechanisms for light-induced defect creation in a-Si:H and chalcogenides, quantum phenomena in multilayer films.
目次
- Glass transition
- preparation and deposition processes
- structure
- electronic properties
- electronic states, nature of conduction and valence bands and tail states, Anderson localization
- transport
- optical properties
- gap states and defects
- recombination
- light-induced phenomena
- thermal equilibration processes
- doping
- summary of specific materials
- a-Si
- H and its related materials
- chalcogenide glasses
- artificial materials - superlattices and band-edge modulated multilayers
- devices
- future prospects of amorphous semiconductors.
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