InP-based materials and devices : physics and technology
Author(s)
Bibliographic Information
InP-based materials and devices : physics and technology
(Wiley series in microwave and optical engineering / Kai Chang, editor)
Wiley, c1999
- : cloth
Available at 6 libraries
  Aomori
  Iwate
  Miyagi
  Akita
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  Gunma
  Saitama
  Chiba
  Tokyo
  Kanagawa
  Niigata
  Toyama
  Ishikawa
  Fukui
  Yamanashi
  Nagano
  Gifu
  Shizuoka
  Aichi
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  Shiga
  Kyoto
  Osaka
  Hyogo
  Nara
  Wakayama
  Tottori
  Shimane
  Okayama
  Hiroshima
  Yamaguchi
  Tokushima
  Kagawa
  Ehime
  Kochi
  Fukuoka
  Saga
  Nagasaki
  Kumamoto
  Oita
  Miyazaki
  Kagoshima
  Okinawa
  Korea
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  United Kingdom
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Note
"A Wiley-Interscience publication."
Includes bibliographical references and index
Description and Table of Contents
Description
A comprehensive guide to current techniques, applications, and trends in InP-based technologies. Introducing one of the hottest technologies in the semiconductor industry, this collection of articles by international leading experts covers the state of the art of indium phosphide (InP)-based materials and devices. From current industry practices to cutting-edge developments to promising research trends, each chapter describes a particular aspect of the technology, giving scientists and engineers the necessary information, including physical principles and technical know-how, to design, apply, and troubleshoot these high-performance, low-cost components for diverse systems-TDM and WDM optical systems or microwave and millimeter-wave systems. The advantages and challenges still to overcome of InP-based semiconductors as compared with the more mature GaAs technology are also thoroughly reviewed. Presented in an easy-to-understand tutorial style, with topics cross-referenced between chapters, InP-Based Materials and Devices features more than 1,500 references as well as 365 figures and tables. Key topics include: Basic materials physics involved in a wide range of InP-based compounds.
Growth of high-purity bulk and heterostructure epitaxy, including MOCVD, MBE, and GS-MBE. Hetero-interface control and dry process techniques for device fabrication. High-performance heterojunction-FETs and HEMTs as well as HBTs for high-speed IC and MMIC applications. Lasers, amplifiers, and modulators as well as photodiodes and receivers for high-speed and WDM networks. Optoelectronic integration and packing for functional, low-cost modules.
Table of Contents
- Demand for InP--Based Optoelectronic Devices and Systems (J. Yoshida).
- Applications of InP--Based Transistors for Microwave and Millimeter-- Wave Systems (M. Matloubian).
- Material Physics of InP--Based Compound Semiconductors (Y. Takeda).
- InP Bulk Crystal Growth and Characterization (D. Bliss).
- Metal--Organic Chemical Vapor Deposition of InP--Based Materials (T. Fukui).
- InP and Related Compound Growth Based on MBE Technologies with Gaseous Sources (H. Heinecke).
- Physics and Technological Control of Surfaces and Interfaces of InP--Based Materials (H. Hasegawa).
- Dry Process Technique for InP--Based Materials (K. Asakawa).
- Heterostructure Field Effect Transistors and Circuit Applications (J. Dickmann).
- Heterojunction Bipolar Transistors and Circuit Applications (H.--F. Chau & W. Liu).
- Lasers, Amplifiers, and Modulators Based on InP--Based Materials (N. Dutta).
- Photodiodes and Receivers Based on InP Materials (K. Taguchi).
- Hybrid Integration and Packaging of InP--Based Optoelectronic Devices (W. Hunziker).
- Index.
by "Nielsen BookData"