InP-based materials and devices : physics and technology

Bibliographic Information

InP-based materials and devices : physics and technology

edited by Osamu Wada, Hideki Hasegawa

(Wiley series in microwave and optical engineering / Kai Chang, editor)

Wiley, c1999

  • : cloth

Available at  / 6 libraries

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Note

"A Wiley-Interscience publication."

Includes bibliographical references and index

Description and Table of Contents

Description

A comprehensive guide to current techniques, applications, and trends in InP-based technologies. Introducing one of the hottest technologies in the semiconductor industry, this collection of articles by international leading experts covers the state of the art of indium phosphide (InP)-based materials and devices. From current industry practices to cutting-edge developments to promising research trends, each chapter describes a particular aspect of the technology, giving scientists and engineers the necessary information, including physical principles and technical know-how, to design, apply, and troubleshoot these high-performance, low-cost components for diverse systems-TDM and WDM optical systems or microwave and millimeter-wave systems. The advantages and challenges still to overcome of InP-based semiconductors as compared with the more mature GaAs technology are also thoroughly reviewed. Presented in an easy-to-understand tutorial style, with topics cross-referenced between chapters, InP-Based Materials and Devices features more than 1,500 references as well as 365 figures and tables. Key topics include: Basic materials physics involved in a wide range of InP-based compounds. Growth of high-purity bulk and heterostructure epitaxy, including MOCVD, MBE, and GS-MBE. Hetero-interface control and dry process techniques for device fabrication. High-performance heterojunction-FETs and HEMTs as well as HBTs for high-speed IC and MMIC applications. Lasers, amplifiers, and modulators as well as photodiodes and receivers for high-speed and WDM networks. Optoelectronic integration and packing for functional, low-cost modules.

Table of Contents

  • Demand for InP--Based Optoelectronic Devices and Systems (J. Yoshida).
  • Applications of InP--Based Transistors for Microwave and Millimeter-- Wave Systems (M. Matloubian).
  • Material Physics of InP--Based Compound Semiconductors (Y. Takeda).
  • InP Bulk Crystal Growth and Characterization (D. Bliss).
  • Metal--Organic Chemical Vapor Deposition of InP--Based Materials (T. Fukui).
  • InP and Related Compound Growth Based on MBE Technologies with Gaseous Sources (H. Heinecke).
  • Physics and Technological Control of Surfaces and Interfaces of InP--Based Materials (H. Hasegawa).
  • Dry Process Technique for InP--Based Materials (K. Asakawa).
  • Heterostructure Field Effect Transistors and Circuit Applications (J. Dickmann).
  • Heterojunction Bipolar Transistors and Circuit Applications (H.--F. Chau & W. Liu).
  • Lasers, Amplifiers, and Modulators Based on InP--Based Materials (N. Dutta).
  • Photodiodes and Receivers Based on InP Materials (K. Taguchi).
  • Hybrid Integration and Packaging of InP--Based Optoelectronic Devices (W. Hunziker).
  • Index.

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