Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A.

著者

• Gossmann, Hans-Joachim L.

書誌事項

Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A.

editors, Hans-Joachim L. Gossmann ... [et al.]

（Materials Research Society symposium proceedings, v. 568）

Materials Research Society, 1999

注記

Includes bibliographical references and index

• NII書誌ID(NCID): BA43280751
• ISBN:
  • 1558994750
• LCCN: 99016530
• 出版国コード: us
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Warrendale, PA
• ページ数/冊数: xi, 298 p.
• 大きさ: 24 cm
• 分類:
  • LCC : TK7871.85
  • DC21 : 621.3815/2
• 件名:
  • LCSH : Semiconductors -- Design and construction Congresses
  • LCSH : Semiconductor doping Congresses
  • LCSH : Silicon Congresses
  • LCSH : Semiconductors -- Defects Congresses
• 親書誌ID:
  • BA00013775