Defects and diffusion in semiconductors : an annual retrospective

著者

• Fisher, D.J.

書誌事項

Defects and diffusion in semiconductors : an annual retrospective

editor: D.J. Fisher

Scitec Publications, c1998-

• [1]
• 2
• 3

注記

Includes bibliographical references and indexes

"Volumes 162-163 of Defect and Diffusion Forum ISSN 1012-0386"

v.2:"Volumes 171-172 of Defect and Diffusion Forum ISSN 1012-0386"

v.3:"Volumes 183-185 of Defect and Diffusion Forum ISSN 1012-0386"

内容説明・目次

巻冊次

[1] ISBN 9783908450351

内容説明

This issue, and the ones which will follow year-by-year, can be regarded not only as supplements to the recent special 10-year retrospective volumes on Diffusion in Silicon (volumes 153-155) and Diffusion in III-V Compounds (volumes 157-159), but also as a return to the 'regular business' of Diffusion and Defect Forum's 30-year project of succinctly summarising recent progress in these fields. The present volume abstracts those papers published during the approximate period from June 1997 to June 1998. Earlier papers have been included in order to make sure that the coverage is contiguous with volume 152 of Defect and Diffusion Forum; the most recent 'regular' issue. Due to vagaries in publication schedules, the 1998 cut-off point is not exact, but any omissions will be corrected in the next annual retrospective. General priority has been given to the most accessible work and, in particular, to those papers which furnish original data or report important new techniques, phenomena or anomalies. Lesser priority has been given to reviews and to entirely theoretical work.

目次

Defect Distribution on Epilayer/Sustrate Interfaces of ISOVPE-MCT Films Defects in Implanted Hg1-xCdxTe: Electrical and Structural Characterization Dislocations in GaAs: Their Impact on Electronic and Atomic Processes Electronic Structures of Dangling-Bond Structures Fabricated on Hydrogen-Terminated Si(100)-2 x 1 Surfaces Recent Progress in the Understanding of Surface Diffusion: Influence of Phase Transitions and Surface Heterogeneities Some Non-Fickian Diffusion Equations: Theory and Applications Comment on 'Dopant Migration Caused by Point Defect Gradients' [P.Pichler, S. List: Solid State Phenomena, 32-33 (1993) 259]

巻冊次

2 ISBN 9783908450467

内容説明

This second volume in the new-format coverage of the latest results in the field covers abstracts from the approximate period of mid-1998 to mid-1999. As always, due to the vagaries of some journal publication dates, abstracts of earlier work may be included in order that the present contents merge seamlessly with those of volumes 162-163; the previous issue in this sub-series.

目次

IR Studies of Oxygen-Yacancy Related Defects in Irradiated Silicon Calculation of Cd Diffusion Profiles in GaAs Theory of Enhanced/Retarded Diffusion of Donor/Acceptor Dopants in Predoped Silicon Ga Self-Diffusion in GaAs

巻冊次

3 ISBN 9783908450542

内容説明

The third annual retrospective of the latest results in the field of defects and diffusion in semiconductors covers the period from mid-1999 to mid-2000. As usual, the coverage also includes, in addition to 'traditional' semiconductors, the more important of the nitride and silicide semiconductors.

目次

Recent Advances in Defect Characterization in 6H-SiC Using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy Electronic State, Atomic Configuration and Local Motion of Hydrogen around Carbon in Silicon Recent Advances in the Application of Slow Positron Beams to the Study of Ion Implantation Defects in Silicon Diffusion Processes in Strained Silicon Germanium Island Structures Damage in III-V Semiconductors from very Low-Energy Process Plasmas Influence of In-Doping on the Crystalline Quality of GaAs Epilayers on Si Substrates Point Defects in III-V Compound Semiconductors On the Role of Interdiffusion during the Growth of Ge on Si(001) and Si(111) Point Defects and their Diffusion in Mercury Cadmium Telluride: Investigation Based upon High-Resolution X-Ray Diffraction Morphological, Structural and Electronic Damage on InAs and InSb Surfaces Induced by (Reactive) Ion Beam Etching Defects and Morphologies in In0.8Ga0.2As/InAlAs/InP(001) for High Electron-Mobility Transistors Diffusion of Zinc in InP, InAsP and InGaAs by the Metal-Organic Vapor-Phase Diffusion Technique Effect of Implant Temperature on Extended Defects Craeted by Ion Implantation in Silicon Diffusion and Electrical Properties of Nickel in Silicon XPEEM Study of Liquid Au-Si Droplets on Si(111) near to the Eutectic Point Effect of Surface Proximity upon Point Defects in Silicon Energetics of Extrinsic Defects in Si and their Role in Nonequilibrium Dopant Diffusion Study of Diffusion and Defects by Medium-Energy Coaxial Impact-Collision Ion Scattering Spectroscopy Transmission Electron Microscopic Study of Intersecting Stacking Faults in ZnSe/GaAs(001) Epilayers and (SiGe)/Si(001) Multilayers Analytical In-Diffusion Profiles of Dopants in Semiconductors

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詳細情報

• NII書誌ID(NCID): BA44529094
• ISBN:
  • 3908450357
  • 3908450462
  • 3908450543
• 出版国コード: sz
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: [Uetikon-Zuerich]
• ページ数/冊数: v.
• 大きさ: 25 cm