Group IV heterostructures, physics, and devices (Si, Ge, C, α-Sn) : proceedings of Symposium D on Group IV Heterostructures, Physics, and Devices (Si, Ge, C, α-Sn) of the 1996 E-MRS Spring Conference, Strasbourg, France, June 4-7, 1996
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Bibliographic Information
Group IV heterostructures, physics, and devices (Si, Ge, C, α-Sn) : proceedings of Symposium D on Group IV Heterostructures, Physics, and Devices (Si, Ge, C, α-Sn) of the 1996 E-MRS Spring Conference, Strasbourg, France, June 4-7, 1996
（European Materials Research Society symposia proceedings, v. 61）
Elsevier, c1997
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"Reprinted from Thin solid films vol. 294 (1-2)"--T.p. verso
Includes bibliographical references and indexes
Description and Table of Contents
Description
These proceedings contain the majority of papers presented atSymposium D, "Group IV heterostructures, physics and devices(Si,Ge,C, -Sn)", of the Spring Meeting of the EuropeanMaterials Research Society, held at the Congress Centre,Strasbourg, France, 4-7 June 1996. This Symposium was attendedby about 150 scientists from throughout the world, among whom 18were invited speakers.The aim of the Symposium was to discussthe most recent results in all fields of Group IVheterostructures and devices from fundamental physics toindustrial applications. Regular and invited contributions werethen welcomed which addressed the different aspects of growth,the effects of strain relaxation, particularly in SiGeC alloys,the basic optical and electrical properties of heterostructuresand low-dimensional structures, the microelectronic andoptoelectronics, such as rare-earth doping techniques, was alsoselected. Except for minor changes, the order of papers presentedin this special issue of Thin Solid Films closely follows theorder of topics listed above as well as the order of sessions atthe Symposium.
Table of Contents
The book is divided in seven sections, I: SiGe Growth andProcessing, Strain Relaxation and Related Characterization.II: Carbon Incorporation, SiGe(C)Alloys and Heterostructures.III: Electrical and Optical Properties of SiGe(C)Alloys andHeterostructures. IV: Er-Doped Silicon, Si/SiO2Heterostructures, Si Nanoparticles in SiO2 inSiO2 and Porous SiGe. V: Electrical Devices.VI: SiGe/Si Quantum Dots and Wires. VII: Luminescence andOptical Devices. Detailed contents are available by contactingthe Publisher.
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