Semiconducting silicides
Author(s)
Bibliographic Information
Semiconducting silicides
（Springer series in materials science, v. 39）
Springer, c2000
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Note
Includes bibliographical references and index
Description and Table of Contents
Description
A comprehensive presentation and analysis of properties and methods of formation of semiconducting silicides. Fundamental electronic, optical and transport properties of the silicides collected from recent publications will help readers choose their application in new generations of solid-state devices. A comprehensive presentation of thermodynamic and kinetic data is given in combination with their technical application, as is information on corresponding thin-film or bulk crystal formation techniques.
Table of Contents
1 General Material Aspects.- 1.1 Crystalline Structure and Mechanical Properties.- 1.2 Thermodynamics of Silicidation.- 1.3 Kinetics of Silicidation.- 1.4 Thermal Oxidation of Silicides.- 2 Thin Film Silicide Formation.- 2.1 Silicides and Silicon Epitaxial Relationships.- 2.2 Diffusion Synthesis.- 2.3 Ion Beam Synthesis.- 2.4 Atomic and Molecular Deposition.- 2.5 General Comments on Silicide Formation Techniques.- 3 Crystal Growth.- 3.1 Methods of Crystal Growth and Material Problems.- 3.2 Crystal Growth by Chemical Vapor Transport Reactions.- 3.3 Crystal Growth from the Flux.- 3.4 Crystal Growth from the Melt.- 3.5 Summary.- 4 Fundamental Electronic and Optical Properties.- 4.1 Basic Relationships.- 4.2 Electronic Band Structure.- 4.3 Interband Optical Spectra.- 4.4 Light Emission.- 4.5 Infrared Optical Response and Raman Scattering.- 4.6 Concluding Remarks.- 5 Transport Properties.- 5.1 Free Charge Carriers and Their Mobility in Semiconductors.- 5.2 Experimental Resistivities.- 5.3 Mobility of Charge Carriers.- 5.4 Thermoelectric Properties.- 5.5 Concluding Remarks.- References.
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