Semiconductor materials and technology : proceedings of the 3rd Intl. Conference and Intensive Tutorial Course on Semiconductor Materials and Technology, ICSMT'96, New Delhi, India, December 1996

Author(s)

    • ICSMT
    • Mehra, R. M.
    • Mathur, P. C.

Bibliographic Information

Semiconductor materials and technology : proceedings of the 3rd Intl. Conference and Intensive Tutorial Course on Semiconductor Materials and Technology, ICSMT'96, New Delhi, India, December 1996

edited by R. M. Mehra and P. C. Mathur

(Diffusion and defect data : solid state data, pt. B . Solid state phenomena ; v. 55)

Scitec Publications, c1997

Available at  / 2 libraries

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Note

Includes bibliographical references and indexes

Description and Table of Contents

Description

The subject area of electronic devices has undergone a rapid expansion in recent years. New developments are continually accurring all over the world. Progress in the field of electronic devices is, however, dependent upon the production and characterization of device grade material. The science and technology of electronic materials has attracted somewhat less attention, as compared with device development.

Table of Contents

Epitaxial Growth and Characterization of Nitride Semiconductors Crystalline Bi2Se3 Thin Films: Growth and Properties Growth of High Purity GaAs Layers by Vapour Phase Epitaxy Amorphous Chalcogenide Semiconductors: The Role of Bismuth Addition Suppression of Auger Recombination by Strain in Sb Based mid-IR Lasers Study of Gate Length, Channel Length and Gate-Source Spacing on the GaAs MESFET Characteristics Physical Principles of New Devices Related to Giant Electric Field Effect in MDS Structure Raman Spectroscopic Investigation of ZnO and Doped ZnO Films, Nanoparticles and Bulk Material at Ambient and High Pressures Microprocessing of Electronic Materials Using Short Wavelength Lasers Band Gap Measurement of the Sintered Cdx Se1-x Films from Reflectance Measurement ZnTe Single Crystal Growth, Photoluminescence and Laser Ablation Studies Photoluminescence Study of Hydrogen Passivation of ZnTe Novel Lateral MOS Controlled Power Devices and Technologies for High Voltage Integrated Circuits Tin Oxide Gas Sensors Structure and Composition of Pulsed Laser Deposited ZnSe Films The Phenomenology of Luminescence in Nanocrystalline Silicon Studies on Electrical Properties of CdS1-xSex Thin Films Development and Characterization of Porous Silicon (a Review) Temperature-Dependent Behaviour of Chalcogenide Thin Film Contacts on Porous Silicon A Review on Template Synthesis: A Membrane Based Technology for Generation of Nano- / Micro-Materials Ion Channeling Studies in InxGa1-xAs / GaAs Electronic Properties Study of Carbon Nanostructure Thermodynamic Equilibrium between Free Carriers and Excitons and Validity of Mass Action Law in GaAs Quantum Wells Annealing Behaviour of High Energy 120Sn Implanted GaAs Influence of Emitter-Base Junction Displacement on the Band Structure in Heterojunction Bipolar Transistors Electrically Conducting Polymers: An Overview Electronic Transport Properties of Mn-Doped a-Se80-xTe20Znx System A Comparative Study on Capacitance and Conductance-Voltage Response of Titanium Dioxide Based MOS Hydrogen Sensor A New Electrochemical Technique for Deposition of Quaternary Compound Cu(InyGa1-y)Se2 Thin Films for Photovoltaic Applications n-Cd0.925Pb0.075S:Sb Photoelectrode / Electrolyte Solar Cells Role of Oxygen on Donor Formation in CZ-Silicon During 430-630 DegreesC Heat Treatment Photoinduced Metastabilities in Organopolysilane Films Position of Dangling Bond States in Doped a-Si:H Potential Fluctuations and Staebler-Wronski Effect Energy Spectrum of Semiconductor Quantum Wells with Error Function Profile: Tunneling Resonance Calculation and Experiment Laser Induced Recrystallisation of Electrophoretically Deposited CdTe and CulnSe2 Films Field Effect Studies on MIS-Structure of P-Type CulnTe2 Films Having Excess Cu and In Direct Microfabrication of Chalcogenide Glasses by Light and Electron-Beam Exposures The Impurity Doping in Widegap Semiconductors Phonon Conductivity in Arsenic Doped Germanium at Low Temperature for Intermediate Donor Concentration Reactive Plasma Processes for the Fabrication of Nano-Dimensional Semiconductor Devices Synthesis and Optical Characteristics of Solution Grown HgxCd1-xS Thin Films Magnetoresistance Measurements on Single Element Photoconductive Hg1-xCdxTe Detectors Effect of Heavy Doping on Dark Conductivity of TBP Doped n-Type a-Si:H Films Barrier Height of Ga-pSi(p) Schottky Diodes Sintered Ternary Films High-Field Transport in Quantum-Well Nanostructures Electrical, Optical and Alloy Scattering Studies of MOCVD Grown InxGa1-xAs Epitaxial Layers on GaAs Substrates Semiconducting Polymers for Environment and Micro-Biological Detection Electrical Properties of Zirconium Sulphoselenide Single Crystals Properties of Bismuth Molybdate as Ethanol Sensor Semiconductor Material Composition of (Bi2S3)1-x(CdS)x Semiconductor Thin Films by Proton Induced X-Ray Emission and Helium Backscattering Study of Mg Associated Levels in GaN Optical Properties of a-Se80-xTexGa20 Thin Films Electrical, Optical and Structural Properties of Copper Aluminium diSelenide Thin Films Fabrication of a New Basic Structure (Al-Ga2Se3Si) for Photovoltaic Application Prediction of Structural Units in Amorphous Ga(1-x)Sex

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Details

  • NCID
    BA46178922
  • ISBN
    • 390845025X
  • Country Code
    sz
  • Title Language Code
    eng
  • Text Language Code
    eng
  • Place of Publication
    Zuerich-Uetikon
  • Pages/Volumes
    xvi, 243 p.
  • Size
    25 cm
  • Parent Bibliography ID
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