Microscopy of semiconducting materials 1999 : proceedings of the Institute of Physics Conference held at Oxford University, 22-25 March 1999
著者
書誌事項
Microscopy of semiconducting materials 1999 : proceedings of the Institute of Physics Conference held at Oxford University, 22-25 March 1999
（Institute of Physics conference series, no. 164）
Institute of Physics Pub., c1999
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注記
Includes bibliographical references and index
内容説明・目次
内容説明
With IC technology continuing to advance, the analysis of very small structures remains critically important. Microscopy of Semiconducting Materials provides an overview of advances in semiconductor studies using microscopy. The book explores the use of transmission and scanning electron microscopy, ultrafine electron probes, and EELS to investigate semiconducting structures. It also covers specimen preparation using focused ion beam milling and advances in microscopy techniques using different types of scanning probes, such as AFM, STM, and SCM. In addition, the book discusses a range of materials, from finished devices to partly processed materials and structures, including nanoscale wires and dots.
This volume provides an authoritative reference for all academics and researchers in materials science, electrical and electronic engineering and instrumentation, and condensed matter physics.
目次
High resolution microscopy and microanalysis (10 papers). Dislocations and boundaries (9 papers). Self-organized and quantum domain structures (14 papers) . Epitaxy-growth phenomena (22 papers). Epitaxy-defect formation (16 papers). Epitaxy-wide band-gap nitrides (20 papers). Processed silicon and related materials (24 papers). Metallization, silicides and contacts (9 papers). Device studies and specimen preparation (7 papers). Scanning probe microscopy (6 papers). Advanced scanning electron and optical microscopy (20 papers).
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