Ultra clean processing of silicon surfaces : proceedings of the Fourth International Symposium on ultra clean processing of silicon surfaces held in Ostend, Belgium, September 21-23, 1998

著者

    • Heyns, Marc
    • Meuris, Marc
    • Mertens, Paul

書誌事項

Ultra clean processing of silicon surfaces : proceedings of the Fourth International Symposium on ultra clean processing of silicon surfaces held in Ostend, Belgium, September 21-23, 1998

editors, Marc Heyns, Marc Meuris and Paul Mertens

(Diffusion and defect data : solid state data, Pt. B : Solid State Phenomena ; v. 65 & 66)

Scitec Publications Ltd, c1999

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注記

Volumes 65-66 of Solid State Phenomena, ISSN1012-0394

Includes index

内容説明・目次

内容説明

The proceedings of the Fourth International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS '98) cover all aspects of ultra-clean Si-technology: cleaning, contamination control, Si-surface chemistry and topography, and its relationship to device performance and process yield. New areas of concern include: cleaning at the interconnect level, resist strip and polymer removal (dry and wet), cleaning and contamination aspects of metallization, wafer backside cleaning and cleaning after Chemical-Mechanical-Polishing (CMP).

目次

  • The Rinsing Problem: Effect of Solute-Surface Interactions on Wafer Purity Hydrogenated Ultrapure Water Production System for Future Wet Cleaning Process Behaviour of Metallic Contaminants during Mos Processing Hydrogen Peroxide Decomposition in Ammonia Solutions New Aspects of the Diluted Dynamic Clean Process Single Step Alkaline Cleaning Solution for Advanced Semiconductor Cleaning Particle Removal Efficiency and Silicon Roughness in HF-DIW/O3/Megasonics Cleaning Industrial Trends in Wet Processing Technology Particle Addition Behaviour of Oxide Stripping by HF Solutions The Electrochemical Kinetics of Silicon Surface Corrosion in HF Containing Dilute Solutions Influence of the Dissolved Gas in Cleaning Solution on Silicon Wafer Cleaning Efficiency Optimization of Deionized Water Consumption in Wafer Wet Processing Chemistry of the Silicon Oxide Surface: Adsorption from SC1 Solutions Production of High Concentrations of Bubble-Free Dissolved Ozone in Water Si-Purifier: A Point of Use Purifier for Noble Metals in HF Baths Potassium Adhesion to Various CVD Oxide and the Surface Cleaning with Hot UPW Production Performance of Single Tank Cleaning Processes for 0,25 m Technology Ozonated DI-Water for Clean Chemical Oxide Growth Ultra-Thin Oxide Growth on Silicon Using Ozonated Solutions Gas-Phase Surface Processing Prior to 3.2 nm Gate Oxidation Post Dry-Etch Cleaning Issues of an Organic Low-K Dielectric Vapor Phase Decomposition - Droplet Collection: Can we Improve the Collection Efficiency for Copper Contamination? Characterization of the Post Dry Etch Cleaning of the Silicon Surface Prior to Silicon Epitaxial Growth Silicon Contamination Prevention in HF Mixtures Applications of Tetramethylammoninium Hydroxide (TMAH) as a Post Tungsten CMP Cleaning Mixture Fe and Cu Removal Efficiency in HF-DIW/O3 Cleaning Sequence Post Polysilicon Etch (Incorporating DUV Resist an BARC) Polymer Cleaning Determination of Moisture / Water in Semiconductor Processing Liquids On-Line with the SemiChem Process Analyzer Evaluation of Cleaning Recipes Based on Ozonated Water for Pre-Gate Oxide Cleaning Characterization of Emitter Interface Oxide Growth in a Vertical LPCVD Polysilicon Deposition Reactor Nitride Strip: Phosphoric Acid Bath-Life above 100 Hours Wet Metal Etching for Ti/Co Self-Aligned Silicides Post-Titanium-Salicide Cleaning with Spray Technology XPS Study of the Cleaning Efficiency by Ozone Processes of the Protective Films Formed by Reactive Ion Etching of Co and Ti Silicide Plasma Etch Residue and Photoresist Removal Utilizing Environmentally Benign Process Chemicals Angle Resolved XPS Characterization of the Formation of Cl and Br Bonds in Poly-Silicon Etching and Its Cleaning Dynamics of Mass Transfer on a Wafer Surface in Ozonated-Water Processing for Photoresist Removal Construction of the Distribution System for Ozonized Water Used in the Wet Cleaning of Si Wafer Surface A Novel Resist and Post-Etch Residue Removal Process Using Ozonated Chemistry Post CMP Cleaning Using a Novel HF Compatible High Power Magasonic Tank Relation between Oxide-CMP Induced Defects and Post-CMP Cleaning Strategies Evaluation of Post Metal Etch Cleaning by Analyzing the Chemical Compositions and Distributions on the Etched Al Surface New Methods for Contamination Control and Dry Cleaning of Silicon Wafers Wafer Backside Cleaning by Twin-Fluid Flow Cleaning Evaluation of a Dry Laser Cleaning Process for the Removal of Surface Particles Dependency of Micro Particle Adhesion of Dispersive and Nondispersive Interactions Analyzed by Atomic Force Microscopy Integrated Cleaning: Application of Densified Fluid Cleaning (DFC) to Post-Etch Residue Removal Application of Microcalorimeter EDS X-Ray Detectors to Particle Analysis Surface Characterization in the Silicon Cleaning Process by a-UPC
  • Atmospheric Ultraviolet Photoelectron Counting Microscopic Analysis of Particle Removal by Gas/Liquid Mixture High-Speed Flow Kelvin-SPV Measurements of Atomically-Flat Si(111) Surfaces Contaminated with Metallic Ions Comparison of Analytical Methods for Residue Detection of Resist Removal Processes Dry Cleaning Technologies Using UV-Excited Radicals and Cryogenic Aerosols A New HF Vapor Process for Native Oxide Removal, Suited for Cluster Applications Silicon Surface Cleaning for Low Temperature Silicon Epitaxial Growth Role of UV/Chlorine Exposure during Dry Surface Conditioning before Integrated Epi Deposition Process Electrical Evaluation of the Epi/Substrate Interface Quality after Different In-Situ and Ex-Situ Low-Temperature Pre-Epi Cleaning Methods Energy Loss of O1s Photoelectrons in Compositional and Structural Transition Layer at and near the SiO2/Si Interface Metal Enhanced Oxidation of Silicon Effect of Si Surface Roughness on the Current-Voltage Characteristics of Ultra-Thin Gate Oxides Infrared Absorption Studies of Wet Chemical Oxides: Thermal Evolution of Impurities X-Ray Photoelectron Study of Gate Oxides and Nitrides Evaluation of C3F8 as an In-Situ Cleaning Gas for PECVD Tools Generation at Point-of-Use of BHF Characterization of HF Cleaning of Ion-Implanted Si Surfaces Determination of SC1 Etch Rates at Low Temperatures with Microscope Interferometry Impact of Trace Metals in Litho Chemicals Post Metal Etch Polymer Removal: An Investigation of Parameters that Influence Corrosion A Process Using Ozonated Water Solutions to Remove Photoresist after Metallization The Optimization of the Cleaning to Remove Residual Bonds of Si-C and Si-F after Fluorocarbon Plasma Etch on the Silicon Surface

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詳細情報

  • NII書誌ID(NCID)
    BA46355405
  • ISBN
    • 3908450403
  • 出版国コード
    sz
  • タイトル言語コード
    eng
  • 本文言語コード
    eng
  • 出版地
    Uetikon-Zuerich
  • ページ数/冊数
    xiv, 301 p.
  • 大きさ
    25 cm
  • 親書誌ID
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