Compound semiconductors 1999 : proceedings of the Twenty-sixth International Symposium on Compound Semiconductors held in Berlin, Germany, 22-26 August 1999
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Bibliographic Information
Compound semiconductors 1999 : proceedings of the Twenty-sixth International Symposium on Compound Semiconductors held in Berlin, Germany, 22-26 August 1999
（Institute of Physics conference series, no. 166）
Institute of Physics Publishing, 2000
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Note
Includes bibliographical references and index
Description and Table of Contents
Description
An international perspective on the latest research, Compound Semiconductors 1999 presents an overview of important developments in all III-V compound semiconductors such as GaAs, InP, and GaN; II-VI compounds such as ZnS, ZnSe, and CdTe; IV-IV compounds such as SiC and SiGe; and IV-VI compounds such as PbTe and SnTe. The book emphasizes piezoelectric (or potentially smart) material heterostructures (Ga, Al, In)N, which will influence future research and development funding. As the preeminent forum for research in compound materials and their applications in devices, this essential library reference is invaluable reading for all researchers in semiconductor physics, and electronic and electrical engineering.
Table of Contents
Heterostructures tomorrow: From physics to Moore's Law. Growth (17 papers). Characterization (21 papers). Quantum wires and quantum dots (25 papers). Electronic devices (16 papers). Optoelectronic devices (21 papers). Wide gap materials and devices (21 papers). Author index.
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