Photoelectric properties and applications of low-mobility semiconductors
Author(s)
Bibliographic Information
Photoelectric properties and applications of low-mobility semiconductors
（Springer tracts in modern physics : Ergebnisse der exakten Naturwissenschaften / editor, G. Höhler, 167 . Solid-state physics / editors,
Springer, c2000
- : hc
Available at / 22 libraries
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The Institute for Solid State Physics Library. The University of Tokyo.図書室
: hc420.8:S1:1677210165986
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Hokkaido University, Library, Graduate School of Science, Faculty of Science and School of Science図書
: hc537.6226/K8362070511305
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Note
"With 57 figures"--T.p.
Includes bibliographical references (p. [87]-95) and index
Description and Table of Contents
Description
The book deals with the physics behind the technological challenge. Three materials from different material classes are considered: hydrogenated amorphous Si (a-Si:H), nanoporous Ti02, and fullerene films. The goal is to clarify the basic transport schemes in these materials, to summarize recent results, illustrate experimental methods, and to develop new ideas for photoelectric applications. The most advanced of the three materials is a-Si:H; its electronic properties have been studied extensively, and it is already used in many device applications. Here it is shown that a small set of parameters is sufficient for an assessment of material quality. Emphasis is also placed on how these parameters can be determined. The other two materials, porous nanocrystalline oxides and the fullerenes, are still at a stage of basic research.
Table of Contents
Introduction * Basic concepts of low-mobility transport * Transport in a-Si:H * Transport in porous TiO2 and in TiO2-based devices * Transport in C60 * Conclusions * References.
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