Beyond the desert 1999 : accelerator, non-accelerator and space approaches into the next millennium : proceedings of the second International Conference on Particle Physics Beyond the Standard Model, Castle Ringberg, Germany, 6-12 June 1999
著者
書誌事項
Beyond the desert 1999 : accelerator, non-accelerator and space approaches into the next millennium : proceedings of the second International Conference on Particle Physics Beyond the Standard Model, Castle Ringberg, Germany, 6-12 June 1999
Institute of Physics Pub., c2000
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注記
Includes bibliographical references
内容説明・目次
内容説明
Addressing the need for an up-to-date reference on silicon devices and heterostructures, Beyond the Desert 99 reviews the technology used to grow and characterize Goup IV alloy films. It covers the theory, device design, and simulation of heterojunction transistors, emphasizing their relevance in developing the technologies involving strained layers; device design and simulation of conventional silicon bipolar transistors and SiGe HBTs at room and low temperatures; and device design and simulation for MOSFETs, including SiGe and strained-Si channel MOSFETs. The book concludes with simulations and examples of different applications. It provides a unified reference for scientists and engineers investigating the use of SiGe and strained silicon in a new generation of high-speed circuit applications.
目次
Introduction. Group IV alloy layers: growth and characterization. HBT principles. Model formulation. HBT: Device design and simulation. Strained-Si heterostructure FETs. Device design and simulation. Simulation applications: examples. SiGe HBT applications. Index.
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