Nonclassical light from semiconductor lasers and LEDs
著者
書誌事項
Nonclassical light from semiconductor lasers and LEDs
（Springer series in photonics, v. 5）
Springer, c2001
大学図書館所蔵 件 / 全13件
-
該当する所蔵館はありません
- すべての絞り込み条件を解除する
注記
Includes index
内容説明・目次
内容説明
Supplies readers with the basic knowledge and guidance for the application of new lasers and light-emitting devices. The first part of the book discusses the generation of sub-shot-noise light in macroscopic pn junction light emitting devices, the second part is on the application of squeezed light in high-precision measurement, the third part concerns the Coulomb blockade effect in a mesoscopic pn junction and generation of single photon states, and the last part is on the detection of single photons using a visible light photon counter.
目次
1. Nonclassical Light.- 1.1 Classical Description of Light.- 1.2 Quantum Description of Light.- 1.3 Coherent State, Squeezed State and Number-Phase Squeezed State.- 1.4 Quantum Theory of Photodetection and Sub-Poisson Photon Distribution.- 1.5 Quantum Theory of Second-Order Coherence and Photon Antibunching.- 1.6 Quantum Theory of Photocurrent Fluctuation and Squeezing.- 2. Noise of p-n Junction Light Emitters.- 2.1 Introduction.- 2.2 Junction Voltage Dynamics: the Poisson Equation.- 2.3 Semiclassical Langevin Equation for Junction Voltage Dynamics.- 2.3.1 Mesoscopic Case (r ? 1).- 2.3.2 Macroscopic Case (r ? 1).- 2.4 Noise Analysis of an LED.- 2.4.1 Steady-State Conditions.- 2.4.2 Linearization.- 2.4.3 Photon-Number Noise.- 2.4.4 Noise in the External Circuit Current.- 2.4.5 Correlation Between Carrier Number and Junction Voltage.- 2.4.6 Correlation Between Photon Flux and Junction Voltage.- 2.5 Summary.- 3. Sub-Poissonian Light Generation in Light-Emitting Diodes.- 3.1 Introduction.- 3.2 Physical Mechanism of Pump-Noise Suppression.- 3.3 Measurement of the Squeezing Bandwidth.- 3.4 Summary.- 4. Amplitude-Squeezed Light Generation in Semiconductor Lasers.- 4.1 Introduction.- 4.2 Interferometric Measurement of Longitudinal-Mode-Partition Noise.- 4.2.1 Principle.- 4.2.2 Experimental Setup.- 4.3 Grating-Feedback External-Cavity Semiconductor Laser.- 4.3.1 Experimental Setup and Procedure.- 4.3.2 Experimental Results.- 4.3.3 Discussion.- 4.4 Injection-Locked Semiconductor Laser.- 4.4.1 Experimental Setup and Procedure.- 4.4.2 Experimental Results.- 4.4.3 Discussion.- 4.4.4 Modeling of the Noise of an Injection-Locked Laser.- 4.5 Summary.- 5. Excess Intensity Noise of a Semiconductor Laser with Nonlinear Gain and Loss.- 5.1 Introduction.- 5.2 Physical Models for Nonlinearity.- 5.2.1 Nonlinear Gain.- 5.2.2 Nonlinear Loss.- 5.3 Noise Analysis Using Langevin Rate Equations.- 5.4 Numerical Results.- 5.4.1 Numerical Parameters.- 5.4.2 Results.- 5.5 Discussion: Effect of Saturable Loss.- 5.6 Comparison of Two Laser Structures with Respect to Saturable Loss.- 5.6.1 Estimate of the Loss by Si DX Centers.- 5.6.2 Experimental Verification of the Saturable Loss.- 5.6.3 Explanation for the Excess Noise in QW Lasers.- 5.7 Summary.- 6. Transverse-Junction-Stripe Lasers for Squeezed Light Generation.- 6.1 Introduction.- 6.2 Fabrication.- 6.2.1 Si Diffusion and Intermixing.- 6.2.2 High V/III Ratio for Sharper Interfaces.- 6.2.3 P Doping by Zn Diffusion.- 6.2.4 Devices.- 6.3 DC Characterization: Threshold, Loss and Quantum Efficiency.- 6.4 Intensity Noise.- 6.4.1 Influence of High V/III Ratio.- 6.4.2 Optimization of External Coupling Efficiency.- 6.4.3 Polarization-Partition Noise.- 6.4.4 Longitudinal-Mode-Partition Noise.- 6.4.5 Suppressed 1/f Noise.- 6.5 Summary.- 7. Sub-Shot-Noise FM Spectroscopy.- 7.1 Introduction.- 7.2 Advantages of Semiconductor Lasers.- 7.3 Signal-to-Noise Ratio (SNR).- 7.4 Realization of Sub-Shot-Noise FM Spectroscopy.- 7.4.1 Frequency and Noise Control by Injection Locking.- 7.4.2 Effect of Injection Locking on Intensity Noise.- 7.4.3 Suppression of Residual AM by Injection-Locking.- 7.4.4 Suppression of Residual AM by Dual Pump Current Modulation.- 7.4.5 Expected Lineshape.- 7.4.6 Spectroscopic Setup.- 7.5 Experimental Results.- 7.6 Future Prospects.- 8. Sub-Shot-Noise FM Noise Spectroscopy.- 8.1 Introduction.- 8.2 Principle of FM Noise Spectroscopy.- 8.3 Signal-to-Noise Ratio and the Advantage of Amplitude Squeezing.- 8.4 Sub-Shot-Noise Spectroscopy.- 8.4.1 Experimental Setup.- 8.4.2 Laser Trapping and Cooling of Rb.- 8.4.3 Expected Optical Transitions in a Magneto-Optic Trap.- 8.4.4 Sample Probing.- 8.4.5 Experimental Result.- 8.5 Phase-Sensitive FM Noise Spectroscopy.- 8.5.1 Experimental Setup.- 8.5.2 Experimental Results.- 8.6 Summary.- 9. Sub-Shot-Noise Interferometry.- 9.1 Introduction.- 9.2 Sensitivity Limit of an Optical Interferometer.- 9.3 Amplitude-Squeezed Light Injection in a Dual-Input Mach-Zehnder Interferometer.- 9.4 Sub-Shot-Noise Phase Measurement.- 9.4.1 Experimental Procedure.- 9.4.2 Experimental Result.- 9.5 Dual-Input Michelson Interferometer.- 9.5.1 Operation Principle.- 9.5.2 Sensitivity of a Dual-Input Michelson Interferometer.- 9.5.3 Sub-Shot-Noise Interferometry.- 9.6 Summary and Future Prospects.- 10. Coulomb Blockade Effect in Mesoscopic p-n Junctions.- 10.1 Introduction.- 10.2 Calculation of Resonant Tunneling Rates.- 10.2.1 Transmittance of the Barrier.- 10.2.2 Tunneling Matrix Element.- 10.2.3 Electron Tunneling Current Density into the Central QW.- 10.2.4 Effect of Inhomogeneous Broadening.- 10.3 Coulomb Blockade Effect on Resonant Tunneling.- 10.4 Coulomb Staircase.- 10.4.1 DC Voltage Bias Condition.- 10.4.2 DC + AC Voltage Bias Condition.- 10.5 Turnstile Operation.- 10.6 Monte-Carlo Simulations.- 10.7 Summary.- 11. Single-Photon Generation in a Single-Photon Turnstile Device.- 11.1 Introduction.- 11.2 Device Fabrication.- 11.2.1 Wafer Design and Growth.- 11.2.2 Ohmic Contact Formation.- 11.2.3 Device Definition: Electron-Beam Lithography.- 11.2.4 Metal Evaporation and Liftoff.- 11.2.5 Device Isolation: ECR-RIE.- 11.2.6 Surface Passivation.- 11.2.7 Planarization and Top-Contact Evaporation.- 11.3 Observation of the Coulomb Staircase.- 11.4 Single-Photon Turnstile Device.- 11.4.1 Preliminary Characterization.- 11.4.2 Experimental Setup.- 11.4.3 Electrical Characterization.- 11.4.4 Optical Characterization.- 11.5 Summary.- 12. Single-Photon Detection with Visible-Light Photon Counter.- 12.1 Introduction.- 12.2 Comparison of Single-Photon Detectors.- 12.2.1 Photomultiplier Tubes (PMTs).- 12.2.2 Avalanche Photodiodes (APDs).- 12.2.3 Superconducting Tunnel Junctions (STJs).- 12.2.4 Solid-State Photomultipliers (SSPMs) and Visible-Light Photon Counters (VLPCs).- 12.3 Operation Principle of a VLPC.- 12.4 Single-Photon Detection System Based on a VLPC.- 12.5 Quantum Efficiency of a VLPC.- 12.6 Theory of Noise in Avalanche Multiplication.- 12.6.1 Excess Noise Factor (ENF).- 12.6.2 Noise Power Spectral Density of the Multiplied Photocurrent.- 12.6.3 Effect of ENF in the Pulse-Height Distribution.- 12.7 Excess Noise Factor of a VLPC.- 12.7.1 Digital Measurement of the Pulse-Height Distribution.- 12.7.2 Analog Noise Power Spectral Density Measurement.- 12.8 Two-Photon Detection with a VLPC.- 12.8.1 Twin Photon Generation in Optical Parametric Downconversion.- 12.8.1 Characterization of Two-Photon Detection with VLPC.- 12.9 Summary.- 13. Future Prospects.- 13.1 Introduction.- 13.2 Regulated and Entangled Photons from a Single Quantum Dot.- 13.3 Single-Mode Spontaneous Emission from a Single Quantum Dot in a Three-Dimensional Microcavity.- 13.4 Lasing and Squeezing of Exciton-Polaritons in a Semiconductor Microcavity.- A. Appendix: Noise and Correlation Spectra for Light-Emitting Diode.- A.1 Linearization.- A.2 LED Photon Noise Spectral Density.- A.3 External Current Noise Spectral Density.- A.4 Junction-Voltage-Carrier-Number Correlation.- A.5 Photon-Flux -Junction-Voltage Correlation.- References.
「Nielsen BookData」 より