Thin films epitaxial growth and nanostructures : proceedings of the EMRS Spring Conference, Strasbourg, France, June 16-19, 1998
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書誌事項
Thin films epitaxial growth and nanostructures : proceedings of the EMRS Spring Conference, Strasbourg, France, June 16-19, 1998
（European Materials Research Society symposia proceedings, v. 79）
Elsevier, c1998
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注記
"Reprinted from: Thin solid films, vol. 336/1-2"--T.p. verso
Includes bibliographical references
内容説明・目次
内容説明
This volume contains the majority of papers presented at the symposium 'Thin Films Epitaxial Growth and Nanostructures', which was held as Symposium D of the E-MRS Spring Meeting 1998 in Strasbourg on June 16th-19th 1998.
Nanometer structures attract high scientific and technological attention by tailoring material properties artificially. Epitaxial growth is a very promising way to produce low-dimensional structures (two-, one-, zero-dimensional) with nanometer dimensions for a variety of materials. This symposium focussed on semiconducting films, on a basic understanding of interface formation and on formation of nanostructures and on microelectronic applications. It provided a forum for discussions of common aspects among researchers working on compound semiconductors and silicon based heterostructures.
Topics treated in this symposium included microscopic description and observation of growth, influence of strain on surface morphology and defect structure, growth on patterned substrates, self assembly of nanostructures, electronic and optoelectronic devices requiring nanometer layers and atomically sharp interfaces, new device concepts and circuit architectures, alternative methods and systems.
目次
Chapter headings and selected papers: Preface. Self-Assembled Structures. Shape, size, strain and correlations in quantum dot systems studied by grazing incidence X-ray scattering methods (T.H. Metzger et al.). Novel Growth Methods. Retarded diffusion of boron in Si due to the formation of an epitaxial CoSi2 layer (L. Kappius et al.). Self-assembly and Strain Adjustment (poster session). TEM study of InAs self-assembled quantum dots in GaAs (E. Muller et al.). Cluster-size distribution of SiGe alloys grown by MBE (N. Pinto et al.). Electronic Devices. Assessment of transport parameters for the design of high speed Si/SiGe HBTs with compositionally graded base (J. Weller et al.). Growth (poster session). Pulsed laser deposition of SmBaCuO thin films (A. Di Trolio et al.). Two-dimensional and zero-dimensional structures of semimagnetic semiconductors prepared by pulsed laser deposition (A.I. Savchuk et al.). Allotaxy in the Ni-Si system (S. Teichert et al.). Island and Wire Formation. Morphology and luminescence of Ge islands grown on Si(001) (M. Goryll et al.). Lateral ordering of self-assembled Ge islands (J.-h. Zhu et al.). Analysis and Modelling of Nanostructures. Dislocation half loop formation in GaSb/(001)GaAs islands and steps role: a Monte Carlo Simulation (J.D. Torre et al.). Vertical MOS Transistor. The vertical heterojunction MOSFET (K. De Meyer et al.). Comparison of lateral and vertical Si-MOSFETS with ultra short channels (D. Behammer et al.). Analysis (poster session). Tunnelling currents in very narrow p+-n+ junctions (G. Reitemann et al.). Magnetoluminescence measurements of two-dimensional hole gas (M. Ciorga et al.).
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